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参数资料
| 型号： | FDB15N50 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 500V 15A TO-263AB |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品目录绘图： | D2PAK, TO-263AB Pkg |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 500V |
| 电流 - 连续漏极(Id) @ 25° C： | 15A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 380 毫欧 @ 7.5A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 41nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1850pF @ 25V |
| 功率 - 最大： | 300W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | TO-263AB |
| 包装： | 标准包装 |
| 产品目录页面： | 1606 (CN2011-ZH PDF) |
| 其它名称： | FDB15N50DKR |
November 2013
F D B 15 N 50
N-Channel UniFET TM MOSFET
5 00 V, 15 A, 380 mΩ
Features
? Low gate charge Q g results in simple drive requirement
(Typ. 33 nC)
? Improved Gate, avalanche and high reapplied dv/dt
ruggedness
? Reduced R DS(on) ( 330m? ( Typ.) @ V GS = 10 V, I D = 7.5 A)
? Reduced Miller capacitance and low Input capacitance
(Typ. C rss = 16 pF)
? Improved switching speed with low EMI
? 175 o C rated junction temperature
Description
UniFET TM MOSFET is Fairchild Semiconductor’s high
voltage MOSFET family based on planar stripe and
DMOS technology. This MOSFET is tailored to reduce
on-state resistance, and to provide better switching
performance and higher avalanche energy strength. This
device family is suitable for switching power converter
applications such as power factor correction (PFC), flat
panel display (FPD) TV power, ATX and electronic lamp
ballasts.
Applications
? Lighting
? Uninterruptible Power Supply
? AC-DC Power Supply
D
D
G
S
D 2 -PAK
G
S
Absolute Maximum Ratings T C = 25 o C unless otherwise note d.
Continuous (T C = 100 C, V GS = 10V)
Symbol
V DSS
V GS
I D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T C = 25 o C, V GS = 10V)
o
FDB15N50
500
±30
15
11
Unit
V
V
A
A
Pulsed
(Note 1)
60
A
P D
Power dissipation
Derate above 25 o C
300
2
W
W/ o C
T J , T STG
Operating and Storage Temperature
Soldering Temperature for 10 seconds
-55 to 175
300 (1.6mm from case)
o
o
C
C
Thermal Characteristics
C/W
Symbol
R θ JC
R θ JA
Parameter
Thermal Resistance Junction to Case , Max.
Thermal Resistance Junction to Ambient , Max.
FDB15N50
0.50
62
Unit
o
o C/W
? 2003 Fairchild Semiconductor Corporation
FDB15N50 Rev. C 1
1
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDB15N50 | 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET 500V 15A TO-263 |
| FDB15N50_NL | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDB-15PF | 制造商:HRS 制造商全称:HRS 功能描述:FD TYPE CONNECTOR FOR RIBBON CABLE |
| FDB-15SF | 制造商:HRS 制造商全称:HRS 功能描述:FD TYPE CONNECTOR FOR RIBBON CABLE |
| FDB16AN08A0 | 功能描述:MOSFET Discrete Auto N-Ch UltraFET Trench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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