参数资料
型号: FDB15N50
厂商: Fairchild Semiconductor
文件页数: 3/7页
文件大小: 0K
描述: MOSFET N-CH 500V 15A TO-263AB
产品培训模块: High Voltage Switches for Power Processing
产品目录绘图: D2PAK, TO-263AB Pkg
标准包装: 1
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 500V
电流 - 连续漏极(Id) @ 25° C: 15A
开态Rds(最大)@ Id, Vgs @ 25° C: 380 毫欧 @ 7.5A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 41nC @ 10V
输入电容 (Ciss) @ Vds: 1850pF @ 25V
功率 - 最大: 300W
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: TO-263AB
包装: 标准包装
产品目录页面: 1606 (CN2011-ZH PDF)
其它名称: FDB15N50DKR
Typical Characteristics
100
10
T J = 25 o C
V GS DESCENDING
10V
6.5V
6V
5.5V
5V
4.5V
100
10
T J = 175 o C
V GS DESCENDING
10V
6V
5.5V
5V
4.5V
4V
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
1
1
10
100
1
1
10
100
60
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 1. Output Characteristics
3.5
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 2. Output Characteristics
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
50 VDD = 100V
3.0
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
2.5
40
2.0
30
TJ = 175 o C
TJ = 25 o C
1.5
20
1.0
10
0
0.5
0
V GS = 10V, I D = 7.5A
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
-50
-25
0
25
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE ( C)
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 3. Transfer Characteristics
o
Figure 4. Normalized Drain To Source On
Resistance vs Junction Temperature
4000
1000
C ISS
15
12
I D = 15A
100V
250V
100
V GS = 0V, f = 1MHz
C OSS
C RSS
9
6
3
400V
10
1
10
100
0
0
1 0
20
3 0
40
50
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Capacitance vs Drain To Source
Voltage
Qg, GATE CHARGE (nC)
Figure 6. Gate Charge Waveforms For Constant
Gate Current
?2003 Fairchild Semiconductor Corporation
FDB15N50 Rev. C1
3
www.fairchildsemi.com
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