- 您现在的位置：买卖IC网 > Datasheet目录414 > FDB088N08 (Fairchild Semiconductor)MOSFET N-CH 75V 75A D2PAK Datasheet资料下载
参数资料
| 型号： | FDB088N08 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 75V 75A D2PAK |
| 产品目录绘图： | D2PAK, TO-263AB Pkg |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 75V |
| 电流 - 连续漏极(Id) @ 25° C： | 120A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 8.8 毫欧 @ 75A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 118nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 6595pF @ 25V |
| 功率 - 最大： | 160W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D²PAK |
| 包装： | 标准包装 |
| 其它名称： | FDB088N08DKR |
Package Marking and Ordering Information
Part Number
FDB088N08
Top Mark
FDB088N08
Package
D 2 -PAK
Packing Method
Tape and Reel
Reel Size
330 mm
Tape Width
24 mm
Quantity
800 units
Electrical Characteristics
T C = 25 o C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV DSS
Drain to Source Breakdown Voltage
I D = 250 μ A, V GS = 0 V, T C = 25 o C
75
-
-
V
Δ BV DSS
/ Δ T J
I DSS
I GSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
I D = 250 μ A, Referenced to
V DS = 75 V, V GS = 0 V
V DS = 75 V, T C = 150 o C
V GS = ±20 V, V DS = 0 V
25 o C
-
-
-
-
0.07
-
-
-
-
1
500
±100
V/ o C
μ A
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V GS = V DS , I D = 250 μ A
V GS = 10 V, I D = 75 A
V DS = 10 V, I D = 37.5 A
2.0
-
-
-
7.3
300
4.0
8.8
-
V
m Ω
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 25 V, V GS = 0 V,
f = 1 MHz
-
-
-
4960
355
200
6595
470
300
pF
pF
pF
Q g(tot)
Q gs
Q gd
R G
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Gate Resistance
V DS = 60 V, I D = 75 A,
V GS = 10 V
f = 1 MHz
(Note 4)
-
-
-
-
91
22
28
-
118
-
-
4
nC
nC
nC
Ω
Switching Characteristics
t d(on)
t r
t d(off)
t f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V DD = 37.5 V, I D = 75 A,
R G = 25 Ω, V GS = 10 V
(Note 4)
-
-
-
-
45
158
244
102
100
326
498
214
ns
ns
ns
ns
Drain-Source Diode Characteristics
I S
I SM
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
85
340
A
A
V SD
t rr
Q rr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I SD = 75 A
V GS = 0 V, I SD = 75 A,
dI F /dt = 100 A/ μ s
-
-
-
-
41.1
80.7
1.25
-
-
V
ns
nC
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 0.11 mH, I AS = 75 A, V DD = 50 V, R G = 25 Ω , starting T J = 25 ° C.
3. I SD ≤ 75 A, di/dt ≤ 200 A/ μ s, V DD ≤ BV DSS , starting T J = 25 ° C.
4. Essentially independent of operating temperature typical characteristics.
?2009 Fairchild Semiconductor Corporation
FDB088N08 Rev. C2
2
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDB110N15A | MOSFET N-CH 150V 92A D2PAK |
| FDB120N10 | MOSFET N-CH 100V 74A D2PAK |
| FDB12N50FTM_WS | MOSFET N-CH 500V 11.5A D2PAK |
| FDB12N50TM | MOSFET N-CH 500V 11.5A D2PAK |
| FDB12N50UTM_WS | MOSFET N-CH 500V 10A D2PAK |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDB-1 | 功能描述:化学物质 2OZ POLY BOTTLE 10/ RoHS:否 制造商:3M Electronic Specialty 产品:Adhesives 类型:Epoxy Compound 大小:1.7 oz 外壳:Plastic Tube |
| FDB101 | 制造商:BILIN 制造商全称:Galaxy Semi-Conductor Holdings Limited 功能描述:SILICON BRIDGE RECTIFIERS |
| FDB-1012 | 制造商:Finisar Corporation 功能描述:GBIC EVALUATION BOARD - Boxed Product (Development Kits) |
| FDB-1017 | 制造商:Finisar Corporation 功能描述:EVALUATION BOARD FOR 2X5 PIN SFF FOOTPRINT PACKAGE - Boxed Product (Development Kits) |
| FDB-1018 | 功能描述:EVAL BOARD SFP/SFP+ RoHS:是 类别:编程器，开发系统 >> 评估演示板和套件 系列:- 标准包装:1 系列:- 主要目的:数字电位器 嵌入式:- 已用 IC / 零件:AD5258 主要属性:- 次要属性:- 已供物品:板 相关产品:AD5258BRMZ1-ND - IC POT DGTL I2C1K 64P 10MSOPAD5258BRMZ10-ND - IC POT DGTL I2C 10K 64P 10MSOPAD5258BRMZ100-ND - IC POT DGTL I2C 100K 64P 10MSOPAD5258BRMZ50-ND - IC POT DGTL I2C 50K 64P 10MSOPAD5258BRMZ1-R7-ND - IC POT DGTL I2C 1K 64P 10MSOPAD5258BRMZ10-R7-ND - IC POT DGTL I2C 10K 64P 10MSOPAD5258BRMZ50-R7-ND - IC POT DGTL I2C 50K 64P 10MSOPAD5258BRMZ100-R7-ND - IC POT DGTL I2C 100K 64P 10MSOP |
发布紧急采购，3分钟左右您将得到回复。