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参数资料
| 型号： | FDB12N50TM |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 500V 11.5A D2PAK |
| 产品目录绘图： | D2PAK, TO-263AB Pkg |
| 标准包装： | 1 |
| 系列： | UniFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 500V |
| 电流 - 连续漏极(Id) @ 25° C： | 11.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 650 毫欧 @ 6A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 30nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1315pF @ 25V |
| 功率 - 最大： | 165W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D²PAK |
| 包装： | 标准包装 |
| 其它名称： | FDB12N50TMDKR |
November 2013
FDB12N50TM
N-Channel UniFET TM MOSFET
500 V, 11.5 A, 650 m ?
Features
? R DS(on) = 550 m ? (Typ.) @ V GS = 10 V, I D = 6 A
? Low Gate Charge (Typ. 22 nC)
? Low C rss (Typ. 12 pF)
? 100% Avalanche Tested
? RoHS Compliant
Applications
Description
UniFET TM MOSFET is Fairchild Semiconductor ’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
? Lighting
? Uninterruptible Power Supply
? AC-DC Power Supply
D
D
G
S
D 2 -PAK
G
S
MOSFET Maximum Ratings T C = 25 o C unless otherwise noted.
Symbol
V DSS
Drain to Source Voltage
Parameter
FDB12N50TM
500
Unit
V
V GSS
I D
Gate to Source Voltage
Drain Current
- Continuous (T C = 25 o C)
- Continuous (T C = 100 o C)
±30
11.5
6.9
V
A
I DM
Drain Current
- Pulsed
(Note 1)
46
A
E AS
I AR
E AR
dv/dt
P D
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T C = 25 o C)
- Derate above 25 o C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
456
11.5
16.7
4.5
165
1.33
mJ
A
mJ
V/ns
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
-55 to +150
300
o
o
C
C
Thermal Characteristics
Symbol
R ? JC
Parameter
Thermal Resistance, Junction to Case, Max
FDB12N50TM
0.75
Unit
R ? JA
Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max.
Thermal Resistance, Junction to Ambient (1 in 2 pad of 2 oz copper), Max.
62.5
40
o
C/W
?2007 Fairchild Semiconductor Corporation
FDB12N50TM Rev. C1
1
www.fairchildsemi.com
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| FDB12N50UTM_WS | MOSFET N-CH 500V 10A D2PAK |
| FDB14AN06LA0_F085 | MOSFET N-CH 60V 67A D2PAK |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDB12N50U | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel MOSFET, FRFET 500V, 10A, 0.8ヘ |
| FDB12N50U_12 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel MOSFET, FRFET 500V, 10A, 0.8?? |
| FDB12N50UTM | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDB12N50UTM_12 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel MOSFET, FRFET 500V, 10A, 0.8?? |
| FDB12N50UTM_WS | 功能描述:MOSFET 500V 10A 0.8Ohm N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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