- 您现在的位置：买卖IC网 > Datasheet目录414 > FDB082N15A (Fairchild Semiconductor)MOSFET N CH 150V 105A D2PAK Datasheet资料下载
参数资料
| 型号： | FDB082N15A |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N CH 150V 105A D2PAK |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 150V |
| 电流 - 连续漏极(Id) @ 25° C： | 105A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 8.2 毫欧 @ 75A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 84nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 6040pF @ 25V |
| 功率 - 最大： | 231W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | TO-263（D2Pak） |
| 包装： | 标准包装 |
| 其它名称： | FDB082N15AFSDKR |
November 2013
FDB082N15A
N-Channel PowerTrench ? MOSFET
150 V, 117 A, 8.2 m Ω
Features
? R DS(on) = 6.7 m Ω (Typ.) @ V GS = 10 V, I D = 75 A
? Fast Switching Speed
? Low Gate Charge, Q G = 64.5 nC (Typ.)
? High Performance Trench Technology for Extremely Low
R DS(on)
? High Power and Current Handling Capability
? RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor ’s advance PowerTrench ? process that has
been tailored to minimize the on-state resistance while main-
taining superior switching performance.
Applications
? Synchronous Rectification for ATX / Server / Telecom PSU
? Battery Protection Circuit
? Motor drives and Uninterruptible Power Supplies
? Micro Solar Inverter
D
D
G
S
D 2 -PAK
G
S
MOSFET Maximum Ratings T C = 25 o C unless otherwise noted.
Symbol
V DSS
Drain to Source Voltage
Parameter
FDB082N15A
150
Unit
V
V GSS
I D
Gate to Source Voltage
Drain Current
- Continuous (T C = 25 o C, Silicon Limited)
- Continuous (T C = 100 o C, Silicon Limited)
±20
117
83
V
A
I DM
Drain Current
- Pulsed
(Note 1)
468
A
E AS
dv/dt
P D
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T C = 25 o C)
- Derate Sbove 25 o C
(Note 2)
(Note 3)
542
6
294
1.96
mJ
V/ns
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
-55 to +175
300
o C
o C
Thermal Characteristics
Symbol
Parameter
FDB082N15A
Unit
R θ JC
R θ JA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
0.51
62.5
o
C/W
?2011 Fairchild Semiconductor Corporation
FDB082N15A Rev. C2
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDB088N08 | MOSFET N-CH 75V 75A D2PAK |
| FDB110N15A | MOSFET N-CH 150V 92A D2PAK |
| FDB120N10 | MOSFET N-CH 100V 74A D2PAK |
| FDB12N50FTM_WS | MOSFET N-CH 500V 11.5A D2PAK |
| FDB12N50TM | MOSFET N-CH 500V 11.5A D2PAK |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDB088N08 | 功能描述:MOSFET NCH 75V 8.8Mohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDB-1 | 功能描述:化学物质 2OZ POLY BOTTLE 10/ RoHS:否 制造商:3M Electronic Specialty 产品:Adhesives 类型:Epoxy Compound 大小:1.7 oz 外壳:Plastic Tube |
| FDB101 | 制造商:BILIN 制造商全称:Galaxy Semi-Conductor Holdings Limited 功能描述:SILICON BRIDGE RECTIFIERS |
| FDB-1012 | 制造商:Finisar Corporation 功能描述:GBIC EVALUATION BOARD - Boxed Product (Development Kits) |
| FDB-1017 | 制造商:Finisar Corporation 功能描述:EVALUATION BOARD FOR 2X5 PIN SFF FOOTPRINT PACKAGE - Boxed Product (Development Kits) |
发布紧急采购，3分钟左右您将得到回复。