参数资料
型号: FDB045AN08A0
厂商: Fairchild Semiconductor
文件页数: 10/12页
文件大小: 0K
描述: MOSFET N-CH 75V 90A D2PAK
产品培训模块: High Voltage Switches for Power Processing
标准包装: 1
系列: PowerTrench®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 75V
电流 - 连续漏极(Id) @ 25° C: 90A
开态Rds(最大)@ Id, Vgs @ 25° C: 4.5 毫欧 @ 80A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 138nC @ 10V
输入电容 (Ciss) @ Vds: 6600pF @ 25V
功率 - 最大: 310W
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: D²PAK
包装: 标准包装
产品目录页面: 1606 (CN2011-ZH PDF)
其它名称: FDB045AN08A0DKR
SPICE Thermal Model
REV 23 March 2002
FDB045AN08A0T
CTHERM1 th 6 6.45e-3
CTHERM2 6 5 3e-2
CTHERM3 5 4 1.4e-2
CTHERM4 4 3 1.65e-2
CTHERM5 3 2 4.85e-2
RTHERM1
th
JUNCTION
CTHERM1
CTHERM6 2 tl 1e-1
6
RTHERM1 th 6 3.24e-3
RTHERM2 6 5 8.08e-3
RTHERM3 5 4 2.28e-2
RTHERM4 4 3 1e-1
RTHERM5 3 2 1.1e-1
RTHERM6 2 tl 1.4e-1
SABER Thermal Model
SABER thermal model FDB045AN08A0T
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 6.45e-3
ctherm.ctherm2 6 5 = 3e-2
ctherm.ctherm3 5 4 = 1.4e-2
ctherm.ctherm4 4 3 = 1.65e-2
ctherm.ctherm5 3 2 = 4.85e-2
ctherm.ctherm6 2 tl = 1e-1
rtherm.rtherm1 th 6 = 3.24e-3
rtherm.rtherm2 6 5 = 8.08e-3
rtherm.rtherm3 5 4 = 2.28e-2
rtherm.rtherm4 4 3 = 1e-1
rtherm.rtherm5 3 2 = 1.1e-1
rtherm.rtherm6 2 tl = 1.4e-1
RTHERM2
RTHERM3
RTHERM4
RTHERM5
5
4
3
CTHERM2
CTHERM3
CTHERM4
CTHERM5
}
2
RTHERM6
tl
CASE
CTHERM6
?2002 Fairchild Semiconductor Corporation
FDB045AN08A0 Rev. C1
10
www.fairchildsemi.com
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