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参数资料
| 型号： | FDB045AN08A0 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 4/12页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 75V 90A D2PAK |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 75V |
| 电流 - 连续漏极(Id) @ 25° C： | 90A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 4.5 毫欧 @ 80A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 138nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 6600pF @ 25V |
| 功率 - 最大： | 310W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D²PAK |
| 包装： | 标准包装 |
| 产品目录页面： | 1606 (CN2011-ZH PDF) |
| 其它名称： | FDB045AN08A0DKR |
Typical Characteristics T C = 25°C unless otherwise noted
2000
1000
100
10 μ s
100 μ s
1ms
500
100
If R = 0
t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )
If R ≠ 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1]
STARTING T J = 25 o C
10
OPERATION I N THI
10ms
AREA MAY BE
LIMITED BY r DS(ON)
DC
10
1
SINGLE PULSE
T J = MAX RATED
T C = 25 o C
STARTING T J = 150 o C
0.1
0.1
1 10
V DS , DRAIN TO SOURCE VOLTAGE (V)
100
1
.01
0.1 1 10
t AV , TIME IN AVALANCHE (ms)
100
Figure 5. Forward Bias Safe Operating Area
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
150
PULSE DURATION = 80 μ s
150
120
DUTY CYCLE = 0.5% MAX
V DD = 15V
120
V GS = 10V
V GS = 7V
V GS = 6V
90
60
T J = 175 o C
90
60
30
0
T J = 25 o C
T J = -55 o C
30
0
V GS = 5V
T C = 25 o C
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
4. 0
4.5
5. 0
5. 5
6.0
0
0.5
1.0
1.5
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
7
PULSE DURATION = 80 μ s
2.5
PULSE DURATION = 80 μ s
6
5
4
3
DUTY CYCLE = 0.5% MAX
V GS = 6V
V GS = 10V
2.0
1.5
1.0
0.5
DUTY CYCLE = 0.5% MAX
V GS = 10V, I D =80A
0
2 0
40
I D , DRAIN CURRENT (A)
6 0
80
-80
-40
0 40 80 120 160
T J , JUNCTION TEMPERATURE ( o C)
200
Figure 9. Drain to Source On Resistance vs Drain
Current
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
?2002 Fairchild Semiconductor Corporation
FDB045AN08A0 Rev. C1
4
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDB045AN08A0 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDB045AN08A0_06 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET 75V, 80A, 4.5mヘ |
| FDB045AN08A0_10 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 75V, 80A, 4.5m |
| FDB045AN08A0_12 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 75V, 80A, 4.5m |
| FDB045AN08A0_F085 | 功能描述:MOSFET 75V N-CHAN PwrTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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