参数资料
型号: FDB10AN06A0
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: JFETs
英文描述: CAP 0.1UF 50V 5% X7R SMD-1206 TR-7-PA SN100
中文描述: 12 A, 60 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封装: TO-263AB, 3 PIN
文件页数: 10/11页
文件大小: 265K
代理商: FDB10AN06A0
2002 Fairchild Semiconductor Corporation
FDB10AN06A0 / FDP10AN06A0 Rev. A
F
SPICE Thermal Model
REV 23 July 2002
FDP10AN06A0T
CTHERM1 TH 6 3.2e-3
CTHERM2 6 5 3.3e-3
CTHERM3 5 4 3.4e-3
CTHERM4 4 3 3.5e-3
CTHERM5 3 2 6.4e-3
CTHERM6 2 TL 1.9e-2
RTHERM1 TH 6 5.5e-4
RTHERM2 6 5 5.0e-3
RTHERM3 5 4 4.5e-2
RTHERM4 4 3 1.5e-1
RTHERM5 3 2 3.37e-1
RTHERM6 2 TL 3.5e-1
SABER Thermal Model
SABER thermal model FDP10AN06A0T
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 =3.2e-3
ctherm.ctherm2 6 5 =3.3e-3
ctherm.ctherm3 5 4 =3.4e-3
ctherm.ctherm4 4 3 =3.5e-3
ctherm.ctherm5 3 2 =6.4e-3
ctherm.ctherm6 2 tl =1.9e-2
rtherm.rtherm1 th 6 =5.5e-4
rtherm.rtherm2 6 5 =5.0e-3
rtherm.rtherm3 5 4 =4.5e-2
rtherm.rtherm4 4 3 =1.5e-1
rtherm.rtherm5 3 2 =3.37e-1
rtherm.rtherm6 2 tl =3.5e-1
}
RTHERM4
RTHERM6
RTHERM5
RTHERM3
RTHERM2
RTHERM1
CTHERM4
CTHERM6
CTHERM5
CTHERM3
CTHERM2
CTHERM1
tl
2
3
4
5
6
th
JUNCTION
CASE
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相关代理商/技术参数
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FDB10AN06A0_Q 功能描述:MOSFET N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB110N15A 功能描述:MOSFET 150V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB120N10 功能描述:MOSFET 100V N-Chan 12Mohm PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB12N50 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel MOSFET 500V, 11.5A, 0.65ヘ
FDB12N50F 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel MOSFET, FRFET 500V, 11.5A, 0.7ヘ