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参数资料
| 型号： | FDB110N15A |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 150V 92A D2PAK |
| 标准包装： | 800 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 150V |
| 电流 - 连续漏极(Id) @ 25° C： | 92A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 11 毫欧 @ 92A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 61nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 4510pF @ 75V |
| 功率 - 最大： | 234W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D²PAK |
| 包装： | 带卷 (TR) |
Package Marking and Ordering Information
Part Number
FDB110N15A
Top Mark
FDB110N15A
Package
D 2 -PAK
Packing Method
Tape and Reel
Reel Size
330 mm
Tape Width
24 mm
Quantity
800 units
Electrical Characteristics T C = 25 o C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
I D = 250 μ A, Referenced to 25 C
BV DSS
Δ BV DSS
/ Δ T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
I D = 250 μ A, V GS = 0 V
V DS = 120 V, V GS = 0 V
V DS = 120 V, T C = 150 o C
V GS = ±20 V, V DS = 0 V
o
150
-
-
-
-
-
0.09
-
-
-
-
-
1
500
±100
V
V/ o C
μ A
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V GS = V DS , I D = 250 μ A
V GS = 10 V, I D = 92 A
V DS = 10 V, I D = 92 A
2.0
-
-
-
9.25
118
4.0
11.0
-
V
m Ω
S
Dynamic Characteristics
C iss
C oss
C rss
C oss (er)
Q g(tot)
Q gs
Q gs2
Q gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Engry Releted Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V DS = 75 V, V GS = 0 V,
f = 1 MHz
V DS = 75 V, I D = 92 A
V GS = 10 V, V DS = 75 V,
I D = 92 A
(Note 4)
-
-
-
-
-
-
-
-
3390
334
14
583
47
16
7.9
9.7
4510
445
-
-
61
-
-
-
pF
pF
pF
pF
nC
nC
nC
nC
Switching Characteristics
t d(on)
t r
t d(off)
t f
ESR
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Equivalent Series Resistance (G-S)
V DD = 75 V, I D = 92 A,
V GS = 10 V, R G = 4.7 Ω
f = 1 MHz
(Note 4)
-
-
-
-
-
25
26
46
14
2.5
60
62
102
38
-
ns
ns
ns
ns
Ω
Drain-Source Diode Characteristics
I S
I SM
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
92
369
A
A
V SD
t rr
Q rr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I SD = 92 A
V GS = 0 V, I SD = 92 A, V DD = 75 V,
dI F /dt = 100 A/ μ s
-
-
-
-
89
255
1.25
-
-
V
ns
nC
Notes:
1. Repetitive rating: pulse width-limited by maximum junction temperature.
2. L = 3 mH, I AS = 15.6 A, R G = 25 Ω , starting T J = 25 ° C.
3. I SD ≤ 92 A, di/dt ≤ 200 A/ μ s, V DD ≤ BV DSS , starting T J = 25 ° C.
4. Essentially independent of operating temperature typical characteristics.
?2011 Fairchild Semiconductor Corporation
FDB110N15A Rev. C1
2
www.fairchildsemi.com
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