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参数资料
| 型号： | FDB28N30TM |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 300V 28A D2PAK |
| 产品目录绘图： | D2PAK, TO-263AB Pkg |
| 标准包装： | 1 |
| 系列： | UniFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 300V |
| 电流 - 连续漏极(Id) @ 25° C： | 28A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 129 毫欧 @ 14A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 50nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2250pF @ 25V |
| 功率 - 最大： | 250W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D²PAK |
| 包装： | 标准包装 |
| 产品目录页面： | 1606 (CN2011-ZH PDF) |
| 其它名称： | FDB28N30TMDKR |
Package Marking and Ordering Information
Part Number
FDB28N30
Top Mark
FDB28N30
Package
D 2 -PAK
Packing Method
Tape and Reel
Reel Size
330 mm
Tape Width
24 mm
Quantity
800 units
Electrical Characteristics
T C = 25 o C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV DSS
Δ BV DSS
/ Δ T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
I D = 250 μ A, V GS = 0 V, T J = 25 o C
I D = 250 μ A, Referenced to 25 o C
V DS = 300 V, V GS = 0 V
V DS = 240 V, T C = 125 o C
V GS = ±30 V, V DS = 0 V
300
-
-
-
-
-
0.4
-
-
-
-
-
1
10
±100
V
V/ o C
μ A
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V GS = V DS , I D = 250 μ A
V GS = 10 V, I D = 14 A
V DS = 40 V, I D = 14 A
3.0
-
-
-
0.108
24.8
5.0
0.129
-
V
Ω
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 25 V, V GS = 0 V,
f = 1 MHz
-
-
-
1690
305
35
2250
405
50
pF
pF
pF
Q g
Q gs
Q gd
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V DS = 240 V, I D = 28 A,
V GS = 10 V
(Note 4)
-
-
-
39
12
17
50
-
-
nC
nC
nC
Switching Characteristics
t d(on)
t r
t d(off)
t f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V DD = 150 V, I D = 28 A,
V GS = 10 V, R G = 25 Ω
(Note 4)
-
-
-
-
35
135
79
69
80
280
168
148
ns
ns
ns
ns
Drain-Source Diode Characteristics
I S
I SM
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
28
112
A
A
V SD
t rr
Q rr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I SD = 28 A
V GS = 0 V, I SD = 28 A,
dI F /dt = 100 A/ μ s
-
-
-
-
279
2.7
1.4
-
-
V
ns
μ C
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 1.5 mH, I AS = 28 A, V DD = 50 V, R G = 25 Ω , starting T J = 25 ° C.
3. I SD ≤ 28 A, di/dt ≤ 200 A/ μ s, V DD ≤ BV DSS , starting T J = 25 ° C.
4. Essentially independent of operating temperature typical characteristics.
?2007 Fairchild Semiconductor Corporation
FDB28N30 Rev. C1
2
www.fairchildsemi.com
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