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参数资料
| 型号： | FDB4020P |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor |
| 中文描述： | 16 A, 20 V, 0.08 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封装： | TO-263AB, 3 PIN |
| 文件页数： | 2/7页 |
| 文件大小： | 213K |
| 代理商： | FDB4020P |
F
FDP4020P Rev. A
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
V
GS
= 0 V, I
D
= -250
μ
A
-20
V
BV
DSS
T
J
I
DSS
I
GSSF
I
D
= -250
μ
A, Referenced to 25
°
C
-28
mV/
°
C
V
DS
= -16 V, V
GS
= 0 V
V
GS
= 8 V, V
DS
= 0 V
-1
100
μ
A
nA
I
GSSR
V
GS
= -8 V, V
DS
= 0 V
-100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain-Source
On-Resistance
V
DS
= V
GS
, I
D
= -250
μ
A
I
D
= -250
μ
A, Referenced to 25
°
C
-0.4
-0.58
2
-1
V
Gate Threshold Voltage
mV/
°
C
V
GS
= -4.5 V,I
D
= -8 A,
V
GS
= -4.5 V,I
D
= -8 A,T
J
=125
°
C
V
GS
= -2.5 V,I
D
= -7 A
0.068
0.098
0.096
0.08
0.13
0.110
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
V
GS
= -4.5 V, V
DS
= -5 V
V
DS
= -5 V, I
D
= -8 A
-20
A
S
14
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
665
270
70
pF
pF
pF
V
DS
= -10 V, V
GS
= 0 V,
f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
8
16
38
80
45
13
ns
ns
ns
ns
nC
nC
nC
24
50
29
9.5
1.3
2.2
V
DD
= -5 V, I
D
= -1 A,
V
GS
= -4.5 V, R
GEN
= 6
V
DS
= -5 V,
I
D
= -16 A, V
GS
= -4.5 V
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
(Note 2)
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
(Note 2)
V
SD
Drain-Source Diode Forward
Voltage
-16
-48
-1.2
A
V
GS
= 0 V, I
S
= -16 A
(Note 2)
V
Notes:
1.
R
is the sum of the juntion-to-case and case-to-ambient thermal resistance.For T0-263 the device is mounted on circuit board with a 1in
2
pad
of 2 oz. copper.
2.
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
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