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参数资料
| 型号： | FDB4020P |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor |
| 中文描述： | 16 A, 20 V, 0.08 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封装： | TO-263AB, 3 PIN |
| 文件页数： | 3/7页 |
| 文件大小： | 213K |
| 代理商： | FDB4020P |
F
FDP4020P Rev. A
Typical Characteristics
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
0
8
16
24
32
40
0
2
4
6
8
10
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-
D
,
-2.0V
-2.5V
-3.0V
-3.5V
V
GS
= -4.5V
-4.0V
0.8
1
1.2
1.4
1.6
1.8
2
0
5
10
15
20
25
30
-I
D
, DIRAIN CURRENT (A)
R
D
,
D
V
GS
= -2.0V
-2.5V
-3.0V
-3.5V
-4.0V
-4.5V
0
4
8
12
16
20
0
0.5
1
1.5
2
2.5
3
3.5
4
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-
D
,
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= -5V
0.0001
0.01
1
100
0
0.4
0.8
1.2
1.6
-V
SD
,
BODY DIODE FORWARD VOLTAGE (V)
-
S
,
V
GS
= 0V
T
A
= 125
o
C
25
o
C
-55
o
C
0
0.04
0.08
0.12
0.16
0.2
1.5
2
2.5
3
3.5
4
4.5
5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= -8A
T
A
= 125
o
C
T
A
= 25
o
C
0.6
0.8
1
1.2
1.4
1.6
1.8
-50
-25
0
25
50
75
100
125
150
175
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= -16A
V
GS
= -4.5V
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