参数资料
型号: FDB5645
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: JFETs
英文描述: 60V N-Channel PowerTrench MOSFET(N沟道PowerTrench MOS场效应管)
中文描述: 83 A, 60 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封装: D2PAK-3
文件页数: 8/10页
文件大小: 422K
代理商: FDB5645
P1
A0
D1
P0
F
W
E1
D0
E2
B0
Tc
Wc
K0
T
Dimensions are in inches and millimeters
Tape Size
Reel
Option
Dim A
Dim B
Dim C
Dim D
Dim N
Dim W1
Dim W2
Dim W3 (LSL-USL)
24mm
13" Dia
13.00
330
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
4.00
100
0.961 +0.078/-0.000
24.4 +2/0
1.197
30.4
0.941 – 0.1.079
23.9 – 27.4
See detail AA
Dim A
max
13" Diameter Option
Dim A
Max
W3
W2 max Measured at Hub
W1 Measured at Hub
Dim N
Dim D
min
Dim C
B Min
DETAIL AA
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
10 deg maximum component rotation
0.9mm
maximum
0.9mm
maximum
Sketch C (Top View)
Component lateral movement
Typical
component
cavity
center line
10 deg maximum
Typical
component
center line
B0
A0
Sketch B (Top View)
Component Rotation
Sketch A (Side or Front Sectional View)
Component Rotation
User Direction of Feed
TO-263AB/D
2
PAK Embossed Carrier Tape
Configuration:
Figure 3.0
TO-263AB/D
2
PAK Reel Configuration:
Figure 4.0
Dimensions are in millimeter
Pkg type
A0
B0
W
D0
D1
E1
E2
F
P1
P0
K0
T
Wc
Tc
T
D
PAK
(24mm)
O263AB/
10.60
15.80
24.0
1.55
1.60
1.75
22.25
11.50
16.0
4.0
4.90
0.450
21.0
0.06
TO-263AB/D
2
PAK Tape and Reel Data and Package Dimensions, continued
August 1999, Rev. B
相关PDF资料
PDF描述
FDP5800 N-Channel Logic Level PowerTrench MOSFET
FDP5N50 N-Channel MOSFET 500V, 5A, 1.4ヘ
FDPF5N50 N-Channel MOSFET 500V, 5A, 1.4ヘ
FDP6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor
FDP61N20 200V N-Channel MOSFET
相关代理商/技术参数
参数描述
FDB5680 功能描述:MOSFET USE 512-FDB20AN06A0 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB5686 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:60V N-Channel PowerTrench⑩ MOSFET
FDB5690 功能描述:MOSFET 60V N-Channel Power Trench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB5800 功能描述:MOSFET 60V N-Ch Logic PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB5800_F085 功能描述:MOSFET 60V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube