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参数资料
| 型号： | FDB86102LZ |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 30A D2PAK |
| 标准包装： | 800 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 30A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 24 毫欧 @ 8.3A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 21nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1275pF @ 50V |
| 功率 - 最大： | 3.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | TO-263 |
| 包装： | 带卷 (TR) |
Electrical Characteristics T J = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
Δ BV DS S
Δ T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = 250 μ A, V GS = 0 V
I D = 250 μ A, referenced to 25 °C
V DS = 80 V, V GS = 0 V
V GS = ±20 V, V DS = 0 V
100
69
1
±10
V
mV/°C
μ A
μ A
On Characteristics
V GS(th)
Δ V GS(th )
Δ T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = 250 μ A
I D = 250 μ A, referenced to 25 °C
1.0
1.5
-6
3.0
V
mV/°C
V GS = 10 V, I D = 8.3 A
18
24
r DS(on)
Static Drain to Source On Resistance
V GS = 4.5 V, I D = 6.8 A
23
35
m Ω
V GS = 10 V, I D = 8.3 A,T J = 125 °C
31
42
g FS
Forward Transconductance
V DS = 5 V, I D = 8.3 A
29
S
Dynamic Characteristics
C iss
C oss
C rss
R g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 50 V, V GS = 0 V,
f = 1MHz
959
181
9
0.4
1275
240
13
pF
pF
pF
Ω
Switching Characteristics
t d(on)
Turn-On Delay Time
6.6
13
ns
t r
t d(off)
t f
Q g(TOT)
Q g(TOT)
Q gs
Q gd
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
V DD = 50 V, I D = 8.3 A,
V GS = 10 V, R GEN = 6 Ω
V GS = 0 V to 10 V
V GS = 0 V to 4.5 V V DD = 50 V,
I D = 8.3 A
2.1
18.2
2.3
15.2
7.6
2.4
2.5
10
33
10
21
11
ns
ns
ns
nC
nC
nC
nC
Drain-Source Diode Characteristics
V SD
t rr
Q rr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I S = 8.3 A
V GS = 0 V, I S = 2.4 A
I F = 8.3 A, di/dt = 100 A/ μ s
(Note 2)
(Note 2)
0.8
0.7
42
40
1.3
1.2
67
64
V
ns
nC
NOTES:
1. R θ JA is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R θ JC is guaranteed by design while R θ CA is determined by
the user's board design.
a) 40 °C/W when mounted on a
1 in 2 pad of 2 oz copper
b) 62.5 °C/W when mounted on
a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μ s, Duty cycle < 2.0 %.
3. Starting T J = 25 °C, L = 3 mH, I AS = 9 A, V DD = 100 V, V GS = 10 V.
4. The diode connected between gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
?2011 Fairchild Semiconductor Corporation
FDB86102LZ Rev.C1
2
www.fairchildsemi.com
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