- 您现在的位置：买卖IC网 > Datasheet目录415 > FDB8860_F085 (Fairchild Semiconductor)MOSFET N-CH 30V 80A D2PAK Datasheet资料下载
参数资料
| 型号： | FDB8860_F085 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 80A D2PAK |
| 标准包装： | 800 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 80A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 2.3 毫欧 @ 80A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 214nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 12585pF @ 15V |
| 功率 - 最大： | 254W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D²PAK |
| 包装： | 带卷 (TR) |
MOSFET Maximum Ratings T C = 25°C unless otherwise noted
Symbol
V DSS
V GS
I D
E AS
P D
T J , T STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (V GS = 10V, T C < 163 o C)
Continuous (V GS = 5V, T C < 162 o C)
Continuous (V GS = 10V, T C = 25 o C, with R θ JA = 43 o C/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power Dissipation
Derate above 25 o C
Operating and Storage Temperature
Ratings
30
±20
80
80
31
Figure 4
947
254
1.7
-55 to +175
Units
V
V
A
A
A
A
mJ
W
W/ o C
o C
Thermal Characteristics
R θ JC
Thermal Resistance Junction to Case
0.59
o C/W
Thermal Resistance Junction to Ambient TO-263,1in copper pad area
R θ JA
R θ JA
Thermal Resistance Junction to Ambient (Note 2)
2
62
43
o
o
C/W
C/W
Package Marking and Ordering Information
Device Marking
FDB8860
Device
FDB8860
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Quantity
800units
Electrical Characteristics T J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
Drain to Source Breakdown Voltage
I D = 1mA, V GS = 0V
30
-
-
V
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V DS = 24V
V GS = 0V
V GS = ± 20V
T J = 150°C
-
-
-
-
-
-
1
250
± 100
μ A
nA
On Characteristics
V GS(th)
Gate to Source Threshold Voltage
V DS = V GS , I D = 250 μ A
1
1.7
3
V
I D = 80A, V GS = 10V
-
1.6
2.3
R DS(ON)
Drain to Source On Resistance
I D = 80A, V GS = 5V
I D = 80A, V GS = 4.5V
-
-
1.9
2.1
2.6
2.7
m Ω
I D = 80A, V GS = 10V,
T J = 175°C
-
2.5
3.6
Dynamic Characteristics
C ISS
C OSS
C RSS
R G
Q g(TOT)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
V DS = 15V, V GS = 0V,
f = 1MHz
f = 1MHz
V GS = 0V to 10V
-
-
-
-
-
9460
1710
1050
1.8
165
12585
2275
1575
-
214
pF
pF
pF
Ω
nC
Q g(5)
Q g(TH)
Q gs
Q gs2
Q gd
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V GS = 0V to 5V
V GS = 0V to 1V
V DD = 15V
I D = 80A
I g = 1.0mA
-
-
-
-
-
89
9.1
26
18
33
115
12
-
-
-
nC
nC
nC
nC
nC
?2010 Fairchild Semiconductor Corporation
FDB8860 Rev.A2
2
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDB8870_F085 | MOSFET N-CH 30V 160A D2PAK |
| FDB8896 | MOSFET N-CH 30V 93A TO-263AB |
| FDC2512_F095 | MOSFET N-CH 150V 1.4A 6-SSOT |
| FDC2612_F095 | MOSFET N-CH 200V 1.1A 6-SSOT |
| FDC3512_F095 | MOSFET N-CH 80V 3A 6-SSOT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDB8870 | 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDB8870_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET |
| FDB8870_10 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 30V, 160A, 3.9m?? |
| FDB8870_F085 | 功能描述:MOSFET 30V 160A 3.9Mohm N-CH POWERTRENCH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDB8874 | 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。