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参数资料
| 型号： | FDB8860_F085 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 5/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 80A D2PAK |
| 标准包装： | 800 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 80A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 2.3 毫欧 @ 80A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 214nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 12585pF @ 15V |
| 功率 - 最大： | 254W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D²PAK |
| 包装： | 带卷 (TR) |
Typical Characteristics T J = 25°C unless otherwise noted
1000
100
10us
500
100
If R = 0
t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )
If R ≠ 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1 ]
100us
10
CURRENT LIMITED
STARTING T J = 25oC
BY PACKAGE
1ms
10
1
0.1
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY R DS(ON)
SINGLE PULSE
T J = MAX RATED
T C = 25 o C
10
10ms
100ms
DC
60
1
0.1
STARTING T J = 150oC
1 10 100 1000
10000
V DS , DRAIN TO SOURCE VOLTAGE(V)
Figure 5. Forward Bias Safe Operating Area
t AV , TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
C apability
160
PULSE DURATION = 80 μ s
120
V GS = 4V
120
DUTY CYCLE = 0.5% MAX
V DD = 5V
100
80
V GS = 5V
V GS = 10V
V GS = 3V
T J = 175 o C
80
60
40
T J = 25 o C
T J = -55 o C
40
20
PULSE DURATION = 80 μ s
0
1.0
1.5 2.0 2.5 3.0
V GS , GATE TO SOURCE VOLTAGE (V)
3.5
0
0.0
DUTY CYCLE = 0.5% MAX
0.2 0.4 0.6 0.8
V DS , DRAIN TO SOURCE VOLTAGE (V)
1.0
Figure 7. Transfer Characteristics
4.0
Figure 8. Saturation Characteristics
1.6
3.5
I D = 40A
PULSE DURATION = 80 μ s
DUTY CYCLE=0.5% MAX
1.4
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
3.0
2.5
T J = 175 o C
1.2
1.0
2.0
T J = 25 o C
0.8
I D = 80A
V GS = 10V
1.5
3
4
5
6
7
8
9
10
0.6
-80
-40 0 40 80 120 160
200
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
T J , JUNCTION TEMPERATURE ( O C )
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
?2010 Fairchild Semiconductor Corporation
FDB8860 Rev.A2
5
www.fairchildsemi.com
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