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参数资料
| 型号： | FDC5614P_D87Z |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 60V 3A 6SSOT |
| 标准包装： | 10,000 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 105 毫欧 @ 3A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 24nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 759pF @ 30V |
| 功率 - 最大： | 800mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 细型，TSOT-23-6 |
| 供应商设备封装： | 6-SSOT |
| 包装： | 带卷 (TR) |
Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BV DSS
Drain–Source Breakdown Voltage
V GS = 0 V, I D = –250 μ A
–60
V
? BV DSS
? T J
I DSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
I D = –250 μ A, Referenced to
25 ° C
V DS = –48 V, V GS = 0 V
–49
–1
mV/ ° C
μ A
I GSSF
I GSSR
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V GS = 20V,
V GS = –20 V
V DS = 0 V
V DS = 0 V
100
–100
nA
nA
On Characteristics
(Note 2)
V GS(th)
? V GS(th)
? T J
R DS(on)
I D(on)
g FS
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
V DS = V GS , I D = –250 μ A
I D = –250 μ A,Referenced to 25 ° C
V GS = –10 V, I D = –3 A
V GS = –4.5 V, I D = –2.7 A
V GS = –10 V, I D = –3 A T J =125 ° C
V GS = –10 V, V DS = –5 V
V DS = –5 V,
I D = –3 A
–1
–20
–1.6
4
82
105
130
8
–3
105
135
190
V
mV/ ° C
m ?
A
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = –30 V,
f = 1.0 MHz
V GS = 0 V,
759
90
39
pF
pF
pF
Switching Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Q g
Q gs
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
V DD = –30 V,
V GS = –10 V,
V DS = –30V,
V GS = –10 V
I D = –1 A,
R GEN = 6 ?
I D = –3.0 A,
7
10
19
12
15
2.5
14
20
34
22
24
ns
ns
ns
ns
nC
nC
Q gd
Gate–Drain Charge
3.0
nC
Drain–Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain–Source Diode Forward Current
–1.3
A
V SD
Drain–Source Diode Forward
Voltage
V GS = 0 V,
I S = –1.3 A
(Note 2)
–0.8
–1.2
V
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain
pins. R θ JC is guaranteed by design while R θ CA is determined by the user's board design.
a.
b.
78°C/W when mounted on a 1in 2 pad of 2oz copper on FR-4 board.
156°C/W when mounted on a minimum pad.
2. Pulse Test: Pulse Width ≤ 300 μ s, Duty Cycle ≤ 2.0%
FDC5614P Rev C1 (W)
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