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| 型号： | FDC638APZ |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 4.5A SSOT-6 |
| 产品变化通告： | Mold Compound Change 08/April/2008 |
| 产品目录绘图： | MOSFET SuperSOT-6 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 43 毫欧 @ 4.5A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 12nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1000pF @ 10V |
| 功率 - 最大： | 800mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 细型，TSOT-23-6 |
| 供应商设备封装： | 6-SSOT |
| 包装： | 标准包装 |
| 产品目录页面： | 1603 (CN2011-ZH PDF) |
| 其它名称： | FDC638APZDKR |
Electrical Characteristics T J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
? BV DS S
? T J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
I D = –250 μ A, V GS = 0V
I D = –250 μ A, referenced to 25°C
–20
–9.4
V
mV/° C
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V DS = –16V,
V GS = 0V
V GS = ±12V, V DS = 0V
T J = 55°C
–1
–10
±10
μ A
μ A
On Characteristics
V GS(th)
? V GS(th)
? T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = –250 μ A
I D = –250 μ A, referenced to 25°C
–0.4
–0.8
2.9
–1.5
V
mV/°C
V GS = –4.5V, I D = –4.5A
37
4 3
r DS(on)
Static Drain to Source On Resistance
V GS = –2.5V, I D = –3.8A
52
6 8
m ?
V GS = –4.5V, I D = –4.5A, T J = 125°C
50
72
I D(on)
g FS
On-State Drain Current
Forward Transconductance
V GS = –10V, V DS = –4.5A
V DS = –10V, I D = –4.5A
–20
18
A
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = –10V, V GS = 0V,
f = 1MHz
750
155
130
1000
210
195
pF
pF
pF
Switching Characteristics (Note 2)
t d(on)
t r
t d(off)
t f
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
V DD = –5V, I D = –4.5A
V GS = –4.5V, R GEN = 6 ?
6
20
48
4 7
12
3 1
77
72
ns
n s
ns
ns
Q g(TOT)
Q gs
Total Gate Charge
Gate to Source Gate Charge
V GS = 0V to –4.5V
V DD = –5V
I D = –4.5A
8
2
12
nC
nC
Q gd
Gate to Drain “Miller” Charge
2
nC
Drain-Source Diode Characteristics
I S
Maximum Continuous Drain-Source Diode Forward Current
–1.3
A
V SD
Source to Drain Diode Forward Voltage V GS = 0V, I S = –1.3A
(Note 2)
–0.8
–1.2
V
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
I F = –4.5A, di/dt = 100A/ μ s
24
13
36
20
ns
nC
Notes:
1: R θ JA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θ JC is
guaranteed by design while R θ CA is determined by user’s board design.
a. 78°C/W when mounted on
a 1 in 2 pad of 2 oz copper on
FR-4 board.
2: Pulse Test: Pulse Width < 30 0 μ s, Duty cycle < 2.0%.
b. 156°C/W when mounted on a
minimum pad of 2 oz copper.
FDC638APZ Rev.B
2
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDC638H | 制造商:Fairchild Semiconductor Corporation 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| FDC638P | 功能描述:MOSFET SSOT-6 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDC638P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SUPERSOT-6 |
| FDC638P_01 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:P-Channel 2.5V PowerTrench Specified MOSFET |
| FDC638P_Q | 功能描述:MOSFET SSOT-6 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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