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| 型号： | FDC658P |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 4A SSOT-6 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 08/April/2008 |
| 标准包装： | 3,000 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 50 毫欧 @ 4A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 12nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 750pF @ 15V |
| 功率 - 最大： | 800mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 细型，TSOT-23-6 |
| 供应商设备封装： | 6-SSOT |
| 包装： | 带卷 (TR) |
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
I D = -250 μA, Referenced to 25 C
BV DSS
? BV DSS / ? T J
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
V GS = 0 V, I D = -250 μA
V DS = -24 V, V GS = 0 V
V GS = 20 V, V DS = 0 V
V GS = -20 V, V DS = 0 V
o
T J = 55 o C
-30
-22
-1
-10
100
-100
V
mV/ o C
μA
μA
nA
nA
ON CHARACTERISTICS (Note 2)
V GS(th)
? V GS(th) / ? T J
R DS(ON)
Gate Threshold Voltage
Gate Threshold VoltageTemp.Coefficient
Static Drain-Source On-Resistance
V DS = V GS , I D = -250 μA
I D = -250 μA, Referenced to 25 o C
V GS = -10 V, I D = -4.0 A
-1
-1.7
4.1
0.041
-3
0.05
V
mV/ o C
?
T J = 125 C
V GS = -4.5 V, I D = -3.4 A
o
0.058
0.06
0.08
0.075
I D(on)
g FS
On-State Drain Current
Forward Transconductance
V GS = -10 V, V DS = -5 V
V DS = -5V, I D = -4 A
-20
9
A
S
DYNAMIC CHARACTERISTICS
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = -15 V, V GS = 0 V,
f = 1.0 MHz
750
220
100
pF
pF
pF
SWITCHING CHARACTERISTICS (Note 2)
t D(on)
t r
t D(off)
t f
Q g
Q gs
Q gd
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = -15 V, I D = -1 A,
V GS = -10 V, R GEN = 6 ?
V DS = -15 V, I D = -4.0 A,
V GS = -5 V
12
14
24
16
8
1.8
3
22
25
38
27
12
ns
ns
ns
ns
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
I S
Continuous Source Diode Current
-1.3
A
V SD
Drain-Source Diode Forward Voltage
V GS = 0 V, I S = -1.3 A
(Note 2)
-0.76
-1.2
V
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θ JC is guaranteed
by design while R θ CA is determined by the user's board design.
a. 78 o C/W when mounted on a 1 in 2 pad of 2oz Cu on FR-4 board.
b. 156 o C/W when mounted on a minimum pad of 2oz Cu on FR-4 board.
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
FDC658P Rev.C
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