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参数资料
| 型号： | FDC8884 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 3/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 6.5A 6-SSOT |
| 标准包装： | 3,000 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 6.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 23 毫欧 @ 6.5A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 7.4nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 465pF @ 15V |
| 功率 - 最大： | 800mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-6 |
| 供应商设备封装： | 6-SSOT |
| 包装： | 带卷 (TR) |
Typical Characteristics T J = 25 °C unless otherwise noted
25
20
V GS = 10 V
V GS = 6 V
V GS = 4.5 V
V GS = 4 V
3.5
3.0
V GS = 3.5 V
V GS = 4 V
15
10
V GS = 3.5 V
2.5
2.0
1.5
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V GS = 4.5 V
V GS = 6 V
5
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
1.0
V GS = 10 V
0
0
0.4
0.8
1.2
1.6
2.0
0.5
0
5
10
15
20
25
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
I D , DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.5
1.4
1.3
I D = 6.5 A
V GS = 10 V
80
60
I D = 6.5 A
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
1.2
1.1
1.0
0.9
0.8
40
20
T J = 125 o C
T J = 25 o C
0.7
-75
-50
-25 0 25 50 75 100 125 150
T J , JUNCTION TEMPERATURE ( o C )
0
2
4 6 8
V GS , GATE TO SOURCE VOLTAGE (V)
10
Figure 3. Normalized On Resistance
vs Junction Temperature
25
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
Figure 4. On-Resistance vs Gate to
Source Voltage
30
V GS = 0 V
10
20
V DS = 5 V
T J = 150 o C
15
10
T J = 150 o C
1
T J = 25 o C
5
T J = 25 o C
T J = -55 o C
0.1
T J = -55 o C
0
1
2
3
4
5
0.01
0.2
0.4
0.6
0.8
1.0
1.2
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
?2012 Fairchild Semiconductor Corporation
FDC8884 Rev.C2
3
www.fairchildsemi.com
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