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参数资料
| 型号： | FDD050N03B |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 90A DPAK |
| 标准包装： | 2,500 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 50A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 5 毫欧 @ 25A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 43nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2875pF @ 15V |
| 功率 - 最大： | 65W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 带卷 (TR) |
March 2013
FDD050N03B
N-Channel PowerTrench ? MOSFET
30 V, 90 A, 5.0 m Ω
Features
? R DS(on) = 3.7 m Ω ( Typ.)@ V GS = 10 V, I D = 25 A
? Fast Switching Speed
? Low Gate Charge, Q G = 33 nC( Typ.)
Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor ? ’s advance PowerTrench ? process that has
been tailored to minimize the on-state resistance while maintain-
ing superior switching performance.
? High Performance
R DS(on)
Trench Technology for Extremely Low
Applications
? High Power and Current Handling Capability
? Synchronous Rectification for ATX / Server / Telecom PSU
? RoHS Compliant
D
D
G
G
S
D-PAK
(TO-252)
S
MOSFET Maximum Ratings T C = 25 o C unless otherwise noted
Symbol
V DSS
Drain to Source Voltage
Parameter
FDD050N03B
30
Unit
V
V GSS
I D
Gate to Source Voltage
Drain Current
- Continuous (T C = 25 o C, Silicon Limited)
- Continuous (T C = 100 o C, Silicon Limited)
- Continuous (T C = 25 o C, Package Limited)
±16
90*
63*
50
V
A
I DM
Drain Current
- Pulsed
(Note 1)
360
A
E AS
dv/dt
P D
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T C = 25 o C)
- Derate above 25 o C
(Note 2)
(Note 3)
72
2
65
0.43
mJ
V/ns
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
-55 to +175
300
o C
o C
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 50A.
Thermal Characteristics
Symbol
Parameter
FDD050N03B
Unit
R θ JC
R θ JA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
(Note 5)
2.3
40
o
C/W
?2009 Fairchild Semiconductor Corporation
FDD050N03B Rev. C0
1
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDD05-12D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:DC-DC CONVERTER 5 ~ 6W |
| FDD05-12D0 | 制造商:CHINFA 制造商全称:Chinfa Electronics Ind. Co., Ltd. 功能描述:DC - DC CONVERTER 5~6W 5V INPUT MODEL |
| FDD05-12D1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:DC-DC CONVERTER 5 ~ 6W |
| FDD05-12D2 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:DC-DC CONVERTER 5 ~ 6W |
| FDD05-12D3 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:DC-DC CONVERTER 5 ~ 6W |
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