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参数资料
| 型号： | FDD10AN06A0 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/12页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 50A D-PAK |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品目录绘图： | DPAK, TO-252(AA) |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 50A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 10.5 毫欧 @ 50A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 37nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1840pF @ 25V |
| 功率 - 最大： | 135W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252AA |
| 包装： | 标准包装 |
| 产品目录页面： | 1606 (CN2011-ZH PDF) |
| 其它名称： | FDD10AN06A0DKR |
January 201 4
FDD10AN06A0
N-Channel PowerTrench ? MOSFET
60 V, 50 A, 1 0.5 m Ω
Features
? R DS(on) = 9.4 m ? (Typ.) @ V GS = 10 V, I D = 50 A
? Q G (tot) = 28 nC (Typ.) @ V GS = 10 V
? Low Miller Charge
? Low Q rr Body Diode
? UIS Capability (Single Pulse and Repetitive Pulse)
Applications
? Consumer Appliances
Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters
using either synchronous or conventional switching PWM
controllers. These MOSFETs feature faster switching and
lower gate charge than other MOSFETs with comparable
RDS(ON) specifications. The result is a MOSFET that is
easy and safer to drive (even at very high frequencies),
and DC/DC power supply designs with higher reliability
and system efficiency.
? LED TV
? Synchronous Rectification
D
D
G
S
D-PAK
G
S
MOSFET Maximum Ratings T C = 25°C unless otherwise noted
Continuous (T amb = 25 C, V GS = 10V, with R θ JA = 52 C/W)
C
Symbol
V DSS
V GS
I D
E AS
P D
T J , T STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T C < 115 o C, V GS = 10V)
o o
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25 o C
Operating and Storage Temperature
FDD10AN06A 0
60
± 20
50
11
Figure 4
429
135
0.9
-55 to 175
U nit
V
V
A
A
A
mJ
W
W/ o C
o
Thermal Characteristics
Thermal Resistance, Junction to Ambient, 1in copper pad area, Max.
C/W
C/W
R θJC
R θ JA
R θ JA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
2
1. 11
100
52
o C/W
o
o
? 20 02 Fairchild Semiconductor Corporation
FDD10AN06A0 Rev. C 3
1
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDD10AN06A0 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDD10AN06A0_F085 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N-CH 60V 11A D-PAK 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N-CH 60V 50A D-PAK 制造商:Fairchild Semiconductor Corporation 功能描述:TAPE REEL / N-Channel PowerTrench MOSFET |
| FDD10AN06A0_NL | 制造商:Fairchild 功能描述:60V/50A N-CH MOSFET |
| FDD10AN06A0_Q | 功能描述:MOSFET 60V 50a .15 Ohms/VGS=1V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDD10AN06A0Q | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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