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参数资料
| 型号： | FDD050N03B |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 90A DPAK |
| 标准包装： | 2,500 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 50A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 5 毫欧 @ 25A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 43nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2875pF @ 15V |
| 功率 - 最大： | 65W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 带卷 (TR) |
Package Marking and Ordering Information
Device Marking
FDD050N03B
Device
FDD050N03B
Package
D-PAK
Reel Size
330mm
Tape Width
16mm
Quantity
2500
Electrical Characteristics T C = 25 o C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV DSS
Drain to Source Breakdown Voltage
I D = 250 μ A, V GS = 0V, T C = 25 o C
30
-
-
V
Δ BV DS S
Δ T J
I DSS
I GSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
I D = 250 μ A, Referenced to
V DS = 24V, V GS = 0V
V GS = ±16V, V DS = 0V
25 o C
-
-
-
13
-
-
-
1
±100
mV/ o C
μ A
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V GS = V DS , I D = 250 μ A
V GS = 10V, I D = 25A
V GS = 4.5V, I D = 15A
V DS = 5V, I D = 50A
1.25
-
-
-
2.0
3.7
5.2
169
3.0
5.0
8.1
-
V
m Ω
S
Dynamic Characteristics
C iss
C oss
C rss
Q g(tot)
Q gs
Q gs2
Q gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V DS = 15V, V GS = 0V
f = 1MHz
V DD = 15V, I D = 50A
V GS = 10V
(Note 4)
-
-
-
-
-
-
-
2160
805
85
33
7.8
3.8
4.6
2875
1070
130
43
-
-
-
pF
pF
pF
nC
nC
nC
nC
Switching Characteristics
t d(on)
t r
t d(off)
t f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V DD = 15V, I D = 50A
V GS = 10V, R GEN = 4.7 Ω
(Note 4)
-
-
-
-
14.5
4.5
30
4.5
39
18
70
19
ns
ns
ns
ns
Drain-Source Diode Characteristics
I S
I SM
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
90*
360
A
A
V SD
t rr
Q rr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0V, I SD = 50A
V GS = 0V, I SD = 50A
dI F /dt = 100A/ μ s
-
-
-
-
33
19
1.3
-
-
V
ns
nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 1mH, I AS = 12A, V DD = 27V, R G = 25 Ω , Starting T J = 25 ° C
3. I SD ≤ 50A, di/dt ≤ 200A/ μ s, V DD ≤ BV DSS , Starting T J = 25 ° C
4. Essentially Independent of Operating Temperature Typical Characteristics
5. When mounted on a 1 in 2 pad of 2 oz copper
?2009 Fairchild Semiconductor Corporation
FDD050N03B Rev. C0
2
www.fairchildsemi.com
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