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| 型号： | FDD3682 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 32A D-PAK |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品目录绘图： | DPAK, TO-252(AA) |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 32A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 36 毫欧 @ 32A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 28nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1250pF @ 25V |
| 功率 - 最大： | 95W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252 |
| 包装： | 标准包装 |
| 产品目录页面： | 1606 (CN2011-ZH PDF) |
| 其它名称： | FDD3682DKR |
Package Marking and Ordering Information
Device Marking
FDD3682
Device
FDD3682
Package
TO-252AA
Reel Size
330mm
Tape Width
16mm
Quantity
2500 units
Electrical Characteristics T C = 25 ° C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B VDSS
Drain to Source Breakdown Voltage
I D = 250 μ A, V GS = 0V
100
-
-
V
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V DS = 80V
V GS = 0V
V GS = ± 20V
T C = 150 o C
-
-
-
-
-
-
1
250
± 100
μ A
nA
On Characteristics
V GS(TH)
Gate to Source Threshold Voltage
V GS = V DS , I D = 250 μ A
2
-
4
V
I D = 32A, V GS = 10V
-
0.032
0.036
r DS(ON)
Drain to Source On Resistance
I D = 16A, V GS = 6V
I D = 32A, V GS = 10V,
T C = 175 o C
-
-
0.040
0.080
0.060
0.090
?
Dynamic Characteristics
C ISS
C OSS
C RSS
Q g(TOT)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
V DS = 25V, V GS = 0V,
f = 1MHz
V GS = 0V to 10V
-
-
-
-
1250
190
45
18.5
-
-
-
28
pF
pF
pF
nC
Q g(TH)
Q gs
Q gs2
Q gd
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “ Miller ” Charge
V GS = 0V to 2V
V DD = 50V
I D = 32A
I g = 1.0mA
-
-
-
-
2.4
6.5
4.1
4.6
3.6
-
-
-
nC
nC
nC
nC
Resistive Switching Characteristics (V GS = 10V)
t ON
t d(ON)
Turn-On Time
Turn-On Delay Time
-
-
-
9
83
-
ns
ns
t r
t d(OFF)
t f
t OFF
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
V DD = 50V, I D = 32A
V GS = 10V, R GS = 16 ?
-
-
-
-
46
24
26
-
-
-
-
75
ns
ns
ns
ns
Drain-Source Diode Characteristics
V SD
t rr
Q RR
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
I SD = 32A
I SD = 16A
I SD = 32A, dI SD /dt = 100A/ μ s
I SD = 32A, dI SD /dt = 100A/ μ s
-
-
-
-
-
-
-
-
1.25
1.0
55
92
V
V
ns
nC
Notes:
1: Starting T J = 25 ° C, L = 0.27mH, I AS = 20A.
?2002 Fairchild Semiconductor Corporation
FDD3682 Rev. B
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDD3682 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDD3682 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SMD TO-252AA 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N, SMD, TO-252AA |
| FDD3682_10 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 100V, 32A, 36m?? |
| FDD3682_F085 | 功能描述:MOSFET N-Channel PwrTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDD3690 | 功能描述:MOSFET 100V NCh PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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