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参数资料
| 型号： | FDD3682 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 4/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 32A D-PAK |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品目录绘图： | DPAK, TO-252(AA) |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 32A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 36 毫欧 @ 32A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 28nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1250pF @ 25V |
| 功率 - 最大： | 95W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252 |
| 包装： | 标准包装 |
| 产品目录页面： | 1606 (CN2011-ZH PDF) |
| 其它名称： | FDD3682DKR |
Typical Characteristics T C = 25 ° C unless otherwise noted
200
100
100 μ s
10 μ s
100
If R = 0
t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )
If R ≠ 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1]
1ms
10
OPERATION IN THIS
10ms
10
STARTING T J = 25 o C
AREA MAY BE
LIMITED BY r DS(ON)
1
0.1
SINGLE PULSE
T J = MAX RATED
T C = 25 o C
DC
1
STARTING T J = 150 o C
1
10
100
200
0.001
0.01 0.1 1
10
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
80
PULSE DURATION = 80 μ s
t AV , TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
80
V GS = 20V
60
DUTY CYCLE = 0.5% MAX
V DD = 15V
60
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V GS = 10V
T C = 25 o C
40
20
T J = 25 o C
T J = 175 o C
40
20
V GS = 6V
0
T J = -55 o C
0
V GS = 5V
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
0
1
2
3
4
60
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
3.0
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
50
VGS = 6V
2.5
2.0
40
VGS = 10V
1.5
30
1.0
V GS = 10V, I D =32A
20
0.5
0
5
10
15
20
25
30
35
-80
-40
0
40
80
120
160
200
Id, DRAIN CURRENT (A)
Figure 9. Drain to Source On Resistance vs Drain
Current
?2002 Fairchild Semiconductor Corporation
T J , JUNCTION TEMPERATURE ( o C)
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
FDD3682 Rev. B
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDD3682 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDD3682 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SMD TO-252AA 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N, SMD, TO-252AA |
| FDD3682_10 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 100V, 32A, 36m?? |
| FDD3682_F085 | 功能描述:MOSFET N-Channel PwrTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDD3690 | 功能描述:MOSFET 100V NCh PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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