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参数资料
型号： FDD3N50NZTM
厂商： Fairchild Semiconductor
文件页数： 2/8页
文件大小： 0K
描述： MOSFET N-CH 500V DPAK
标准包装： 2,500
系列： UniFET-II™
FET 型： MOSFET N 通道，金属氧化物
FET 特点： 标准
漏极至源极电压(Vdss)： 500V
电流 - 连续漏极(Id) @ 25° C： 2.5A
开态Rds（最大）@ Id, Vgs @ 25° C： 2.5 欧姆 @ 1.25A，10V
Id 时的 Vgs(th)（最大）： 5V @ 250µA
闸电荷(Qg) @ Vgs： 8nC @ 10V
输入电容 (Ciss) @ Vds： 280pF @ 25V
功率 - 最大： 40W
安装类型： 表面贴装
封装/外壳： TO-252-3，DPak（2 引线+接片），SC-63
供应商设备封装： D-Pak
包装： 带卷 (TR)
Package Marking and Ordering Information
Part Number
FDD3N50NZTM
Top Mark
FDD3N50NZ
Package
DPAK
Packing Method
Tape and Reel
Reel Size
330 mm
Tape Width
16 mm
Quantity
2500 units
Electrical Characteristics T C = 25 o C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV DSS
Drain to Source Breakdown Voltage
I D = 250 μ A, V GS = 0 V, T C = 25 o C
500
-
-
V
Δ BV DSS
/ Δ T J
Breakdown Voltage Temperature
Coefficient
I D = 250 μ A, Referenced to
25 o C
-
0.5
-
V/ o C
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
V DS = 500 V, V GS = 0 V
V DS = 400 V, V GS = 0 V,T C = 125 o C
V GS = ±25 V, V DS = 0 V
-
-
-
-
-
-
1
10
±10
μ A
μ A
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V GS = V DS , I D = 250 μ A
V GS = 10 V, I D = 1.25 A
V DS = 20 V, I D = 1.25 A
3.0
-
-
-
2.1
1.9
5.0
2.5
-
V
Ω
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 25 V, V GS = 0 V,
f = 1 MHz
-
-
-
210
30
2.5
280
45
5
pF
pF
pF
Q g(tot)
Q gs
Q gd
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V DS = 400 V, I D = 2.5 A,
V GS = 10 V
(Note 4)
-
-
-
6.2
1.4
3.1
8
-
-
nC
nC
nC
Switching Characteristics
t d(on)
t r
t d(off)
t f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V DD = 250 V, I D = 2.5 A,
V GS = 10 V, R G = 25 Ω
(Note 4)
-
-
-
-
10
15
26
17
30
40
60
45
ns
ns
ns
ns
Drain-Source Diode Characteristics
I S
I SM
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
2.5
10
A
A
V SD
t rr
Q rr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I SD = 2.5 A
V GS = 0 V, I SD = 2.5 A,
dI F /dt = 100 A/ μ s
-
-
-
-
190
0.52
1.4
-
-
V
ns
μ C
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 36.6 mH, I AS = 2.5 A, V DD = 50 V, R G = 25 Ω , starting T J = 25 ° C.
3. I SD ≤ 2.5 A, di/dt ≤ 200 A/ μ s, V DD ≤ BV DSS , starting T J = 25 ° C.
4. Essentially independent of operating temperature typical characteristics.
?2011 Fairchild Semiconductor Corporation
FDD3N50NZ Rev. C1
2
www.fairchildsemi.com
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