- 您现在的位置：买卖IC网 > Datasheet目录417 > FDD6N20TM (Fairchild Semiconductor)MOSFET N-CH 200V 4.5A DPAK Datasheet资料下载
参数资料
| 型号： | FDD6N20TM |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 200V 4.5A DPAK |
| 产品目录绘图： | DPAK, TO-252(AA) |
| 标准包装： | 1 |
| 系列： | UniFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 200V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 800 毫欧 @ 2.3A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 6.1nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 230pF @ 25V |
| 功率 - 最大： | 40W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 标准包装 |
| 产品目录页面： | 1606 (CN2011-ZH PDF) |
| 其它名称： | FDD6N20TMDKR |
November 2013
FDD6N20TM
N-Channel UniFET TM MOSFET
200 V, 4.5 A, 800 m Ω
Features
? R DS(on) = 600 m Ω (Typ.) @ V GS = 10 V, I D = 2.3 A
? Low Gate Charge (Typ. 4.7 nC)
? Low C rss (Typ. 6.3 pF)
? 100% Avalanche Tested
? RoHS Compliant
Applications
Description
UniFET TM MOSFET is Fairchild Semiconductor ’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche en-
ergy strength. This device family is suitable for switching power
converter applications such as power factor correction (PFC),
flat panel display (FPD) TV power, ATX and electronic lamp bal-
lasts.
? LCD/LED/PDP TV
? Consumer Appliances
? Lighting
? Uninterruptible Power Supply
D
D
G
S
D-PAK
G
S
MOSFET Maximum Ratings T C = 25 o C unless otherwise noted.
Symbol
V DSS
Drain to Source Voltage
Parameter
FDD6N20TM
200
Unit
V
V GSS
I D
Gate to Source Voltage
Drain Current
- Continuous (T C = 25 o C)
- Continuous (T C = 100 o C)
±30
4.5
2.7
V
A
I DM
Drain Current
- Pulsed
(Note 1)
18
A
E AS
I AR
E AR
dv/dt
P D
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T C = 25 o C)
- Derate Above 25 o C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
60
4.5
4.0
4.5
40
0.32
mJ
A
mJ
V/ns
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
-55 to +150
300
o
o
C
C
Thermal Characteristics
Symbol
Parameter
FDD6N20TM
Unit
R θ JC
R θ JA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
3.1
110
o
C/W
?2007 Fairchild Semiconductor Corporation
FDD6N20TM Rev. C1
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDD6N25TF | MOSFET N-CH 250V 4.4A DPAK |
| FDD6N50FTF | MOSFET N-CH 500V 5.5A DPAK |
| FDD6N50TM | MOSFET N-CH 500V 6A DPAK |
| FDD7N20TM | MOSFET N-CH 200V 5A D-PAK |
| FDD7N60NZTM | MOSFET N-CH 600V 5.5A DPAK-3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDD6N25 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:250V N-Channel MOSFET |
| FDD6N25TF | 功能描述:MOSFET 250V N-CH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDD6N25TM | 功能描述:MOSFET 250V N-CH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDD6N50 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:500V N-Channel MOSFET |
| FDD6N50F | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel MOSFET 500V, 5.5A, 1.15ヘ |
发布紧急采购，3分钟左右您将得到回复。