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| 型号： | FDG312P |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 1.2A SC70-6 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 Mold Compound Change 07/May/2008 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 180 毫欧 @ 1.2A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 5nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 330pF @ 10V |
| 功率 - 最大： | 480mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SC-70-6 |
| 包装： | 标准包装 |
| 其它名称： | FDG312PDKR |
DMOS E lectrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ
Max Units
Off Characteristics
BV DSS
? BV DSS
? T J
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V GS = 0 V, I D = -250 μ A
I D = -250 μ A, Referenced to 25 ° C
V DS = -16 V, V GS = 0 V
V GS = 8 V, V DS = 0 V
V GS = -8 V, V DS = 0 V
-20
-19
-1
100
-100
V
mV/ ° C
μ A
nA
nA
On Characteristics
(Note 2)
V GS(th)
? V GS(th)
? T J
R DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
V DS = V GS , I D = -250 μ A
I D = -250 μ A, Referenced to 25 ° C
V GS = -4.5 V, I D = -1.2 A
V GS = -4.5 V, I D = -1.2 A @125 ° C
-0.4
-0.9
2.5
0.135
0.200
-1.5
0.18
0.29
V
mV/ ° C
?
V GS = -2.5 V, I D = -1 A
0.187
0.25
I D(on)
g FS
On-State Drain Current
Forward Transconductance
V GS = -4.5 V, V DS = -5 V
V DS = -5 V, I D = -1.2 A
-3
3.8
A
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = -10 V, V GS = 0 V,
f = 1.0 MHz
330
80
35
pF
pF
pF
Switching Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = -5 V, I D = -0.5 A,
V GS = -4.5 V, R GEN = 6 ?
V DS = -10 V, I D = -1.2 A,
V GS = -4.5 V
7
12
16
5
3.3
0.8
0.7
15
22
26
12
5
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain-Source Diode Forward Current
-0.6
A
V SD
Drain-Source Diode Forward Voltage
V GS = 0 V, I S = -0.6 A
(Note 2)
-0.83
-1.2
V
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R θ JC is guaranteed by design while R θ JA is determined by the user's board design.
a) 170 ° C/W when
mounted on a 1 in 2
pad of 2oz copper.
b) 225 ° C/W when
mounted on a half
of package sized 2oz.
c) 260 ° C/W when
mounted on a minimum
pad of 2oz copper.
copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 μ s, Duty Cycle ≤ 2.0%
FDG312P Rev. C
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PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDG312P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDG313N | 功能描述:MOSFET SC70-6 N-CH 25V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDG313N | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDG313N_D87Z | 功能描述:MOSFET SC70-6 N-CH 25V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDG314P | 功能描述:MOSFET SC70-6 P-CH -25V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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