- 您现在的位置：买卖IC网 > Datasheet目录418 > FDG315N (Fairchild Semiconductor)MOSFET N-CH 30V 2A SC70-6 Datasheet资料下载
参数资料
| 型号： | FDG315N |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 2A SC70-6 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 Mold Compound Change 07/May/2008 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 120 毫欧 @ 2A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 4nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 220pF @ 15V |
| 功率 - 最大： | 480mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SC-70-6 |
| 包装： | 标准包装 |
| 其它名称： | FDG315NDKR |
Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BV DSS
? BV DSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
V GS = 0 V, I D = 250 μ A
I D = 250 μ A, Referenced to 25 ° C
30
26
V
mV/ ° C
? T J
Coefficient
I DSS
I GSS
I GSS
Zero Gate Voltage Drain Current
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
V DS = 24 V, V GS = 0 V
V GS = 16 V, V DS = 0 V
V GS = -16 V, V DS = 0 V
1
100
-100
μ A
nA
nA
On Characteristics
(Note 2)
V GS(th)
? V GS(th)
Gate Threshold Voltage
Gate Threshold Voltage
V DS = V GS , I D = 250 μ A
I D = 250 μ A, Referenced to 25 ° C
1
1.8
-4
3
V
mV/ ° C
? T J
Temperature Coefficient
R DS(on)
Static Drain-Source
On-Resistance
V GS = 10 V, I D = 2 A
V GS = 10 V, I D = 2 A, T J = 125 ° C
0.100
0.140
0.12
0.20
?
V GS = 4.5 V, I D = 1.7 A
0.130
0.16
I D(on)
G FS
On-State Drain Current
Forward Transconductance
V GS = 4.5 V, V DS = 5 V
V DS = 5 V, I D = 2 A
3
5
A
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 15 V, V GS = 0 V,
f = 1.0 MHz
220
50
20
pF
pF
pF
Switching Characteristics
(Note 2)
I d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 15 V, I D = 1 A,
V GS = 10 V, R GEN = 6 ?
V DS = 15 V, I D = 2 A,
V GS = 5 V
3
11
7
3
2.1
0.8
0.7
6
22
14
6
4
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain-Source Diode Forward Current
0.42
A
V SD
Drain-Source Diode Forward
V GS = 0 V, I S = 0.42 A
(Note 2)
0.7
1.2
V
Voltage
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface
of the drain pins. R θ JC is guaranteed by design while R θ CA is determined by the user's board design.
a) 170 ° C/W when mounted on a 1 in 2 pad of 2oz copper.
b) 260 ° C/W when mounted on a minimum pad.
2. Pulse Test: Pulse Width ≤ 300 μ s, Duty Cycle ≤ 2.0%
FDG315N Rev. C
相关PDF资料 |
PDF描述 |
|---|---|
| FDG316P | MOSFET P-CH 30V 1.6A SC70-6 |
| FDG327NZ | MOSFET N-CH 20V 1.5A SC70-6 |
| FDG327N | MOSFET N-CH 20V 1.5A SC70-6 |
| FDG328P | MOSFET P-CH 20V 1.5A SC70-6 |
| FDG330P | MOSFET P-CH 12V 2A SC70-6 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDG316P | 功能描述:MOSFET SC70-6 P-CH -30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDG318P | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDG326 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:P-Channel 1.8V Specified PowerTrench MOSFET |
| FDG326P | 功能描述:MOSFET SC70-6 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDG326P_Q | 功能描述:MOSFET SC70-6 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。