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参数资料
| 型号： | FDG327NZ |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 1.5A SC70-6 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 Mold Compound Change 07/May/2008 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 90 毫欧 @ 1.5A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 6nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 412pF @ 10V |
| 功率 - 最大： | 380mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SC-70-6 |
| 包装： | 标准包装 |
| 其它名称： | FDG327NZFSDKR |
Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ
Max
Units
Off Characteristics
BV DSS
Drain–Source Breakdown Voltage
V GS = 0 V,
I D = 250 μ A
20
V
? BV DSS
? T J
Breakdown Voltage Temperature
Coefficient
I D = 250 μ A, Referenced to 25 ° C
11
mV/ ° C
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate–Body Leakage
V DS = 16 V,
V GS = ± 8 V,
V GS = 0 V
V DS = 0 V
1
± 10
μ A
μ A
On Characteristics
(Note 2)
V GS(th)
Gate Threshold Voltage
V DS = V GS ,
I D = 250 μ A
0.4
0.7
1.5
V
? V GS(th)
? T J
Gate Threshold Voltage
Temperature Coefficient
ID = 250 μ A, Referenced to 25 ° C
–2
mV/ ° C
R DS(on)
Static Drain–Source
On–Resistance
V GS = 4.5 V, I D = 1.5 A
V GS = 2.5 V, I D = 1.4 A
V GS = 1.8 V, I D = 1.2 A
V GS = 4.5 V, I D = 1.5 A, T J =125 ° C
68
77
90
86
90
100
140
123
m ?
I D(on)
g FS
On–State Drain Current
Forward Transconductance
V GS = 4.5V,
V DS = 10 V,
V DS = 5 V
I D = 1.5 A
3
2.2
A
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 10 V,
f = 1.0 MHz
V GS = 0 V
412
81
44
pF
pF
pF
R G
Gate Resistance
V GS = 15 mV, f = 1.0 MHz
1.9
?
Switching Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Q g
Q gs
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
V DD = 10 V,
V GS = 4.5 V,
V DS = 10 V,
V GS = 4.5 V
I D = 1 A,
R GEN = 6 ?
I D = 1.5 A,
6.2
2.3
18
2.9
4.2
0.4
13
10
33
10
6
ns
ns
n s
ns
nC
nC
Q gd
Gate–Drain Charge
1
nC
Drain–Source Diode Characteristics and Maximum Ratings
V SD
Drain–Source Diode Forward
Voltage
V GS = 0 V,
I S = 0.32 A
(Note 2)
0.6
1.2
V
t rr
Q rr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
I F = 1.5 A,
d iF /d t = 100 A/μs
4
2
nS
nC
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R θ JC is guaranteed by design while R θ CA is determined by the user's board design.
a)
300°C/W when
mounted on a 1in 2 pad
of 2 oz copper.
b)
333°C/W when mounted
on a minimum pad of 2 oz
copper.
2. Pulse Test: Pulse Width < 300 μ s, Duty Cycle < 2.0%
FDG327NZ Rev C 1 (W)
相关PDF资料 |
PDF描述 |
|---|---|
| FDG327N | MOSFET N-CH 20V 1.5A SC70-6 |
| FDG328P | MOSFET P-CH 20V 1.5A SC70-6 |
| FDG330P | MOSFET P-CH 12V 2A SC70-6 |
| FDG332PZ | MOSFET P-CH 20V 2.6A SC70-6 |
| FDG410NZ | MOSFET N-CH SINGLE 20V SC70-6 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDG327NZ_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:20V N-Channel PowerTrenchO MOSFET |
| FDG327NZ_Q | 功能描述:MOSFET 20V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDG328P | 功能描述:MOSFET P-Ch PowerTrench Specified 2.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDG328P | 制造商:Fairchild Semiconductor Corporation 功能描述:SC70-6 SINGLE PCH 20V :ROHS COMPLIANT |
| FDG329N | 功能描述:MOSFET 20V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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