参数资料
型号: FDG410NZ
厂商: Fairchild Semiconductor
文件页数: 1/7页
文件大小: 0K
描述: MOSFET N-CH SINGLE 20V SC70-6
标准包装: 3,000
系列: PowerTrench®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 2.2A
开态Rds(最大)@ Id, Vgs @ 25° C: 70 毫欧 @ 2.2A,4.5V
Id 时的 Vgs(th)(最大): 1V @ 250µA
闸电荷(Qg) @ Vgs: 7.2nC @ 4.5V
输入电容 (Ciss) @ Vds: 535pF @ 10V
功率 - 最大: 380mW
安装类型: 表面贴装
封装/外壳: 6-TSSOP,SC-88,SOT-363
供应商设备封装: SC-70-6
包装: 带卷 (TR)
March 2009
FDG410NZ
Single N-Channel PowerTrench ? MOSFET
20 V, 2.2 A, 70 m ?
Features
Max r DS(on) = 70 m ? at V GS = 4.5 V, I D = 2.2 A
Max r DS(on) = 77 m ? at V GS = 2.5 V, I D = 2.0 A
Max r DS(on) = 87 m ? at V GS = 1.8 V, I D = 1.8 A
Max r DS(on) = 115 m ? at V GS = 1.5 V, I D = 1.5 A
HBM ESD protection level > 2 kV (Note 3)
High performance trench technology for extremely low r DS(on)
High power and current handling capability
Fast switching speed
Low gate charge
RoHS Compliant
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers. It has
been optimized use in small switching regulaters, providing an
extremely low r DS(on) and gate charge (Q g ) in a small package.
Applications
DC/DC converter
Power management
Load switch
D
D
S
D 1
6 D
G
D 2
5 D
D
D
G 3
4 S
SC70-6
MOSFET Maximum Ratings T A = 25 °C unless otherwise noted
Symbol
V DS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
20
±8
Units
V
V
I D
P D
-Continuous
-Pulsed
Power Dissipation
Power Dissipation
T A = 25 °C
T A = 25 °C
T A = 25 °C
(Note 1a)
(Note 1a)
(Note 1b)
2.2
6.0
0.42
0.38
A
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R θ JA
R θ JA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1a)
(Note 1b)
300
333
°C/W
Package Marking and Ordering Information
Device Marking
.41
Device
FDG410NZ
Package
SC70-6
Reel Size
7”
Tape Width
8 mm
Quantity
3000 units
?2009 Fairchild Semiconductor Corporation
FDG410NZ Rev . B
1
www.fairchildsemi.com
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