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参数资料
| 型号： | FDG410NZ |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH SINGLE 20V SC70-6 |
| 标准包装： | 3,000 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 70 毫欧 @ 2.2A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 7.2nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 535pF @ 10V |
| 功率 - 最大： | 380mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SC-70-6 |
| 包装： | 带卷 (TR) |
Electrical Characteristics T J = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
? BV DSS
? T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = 250 μ A, V GS = 0 V
I D = 250 μ A, referenced to 25 °C
V DS = 16 V, V GS = 0 V
V GS = ±8 V, V DS = 0 V
20
17
1
±10
V
mV / °C
μ A
μ A
On Characteristics
V GS(th)
? V GS(th)
? T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = 250 μ A
I D = 250 μ A, referenced to 25 °C
0.4
0.7
-3
1.0
V
mV/°C
V GS = 4.5 V, I D = 2.2 A
V GS = 2.5 V, I D = 2.0 A
50
56
70
77
r DS(on)
Static Drain to Source On Resistance
V GS = 1.8 V, I D = 1.8 A
V GS = 1.5 V, I D = 1.5 A
67
83
87
115
m ?
V GS = 4.5 V, I D = 2.2 A,
T J = 125 °C
71
100
g FS
Forward Transconductance
V DD = 5 V, I D = 2.2 A
11
S
Dynamic Characteristics
C iss
C oss
C rss
R g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 10 V, V GS = 0 V,
f = 1 MHz
400
70
45
2.8
535
95
70
pF
pF
pF
?
Switching Characteristics
t d(on)
Turn-On Delay Time
5.3
11
ns
t r
t d(off)
t f
Q g
Q gs
Q gd
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
V DD = 10 V, I D = 2.2 A,
V GS = 4.5 V, R GEN = 6 ?
V GS = 4.5 V, V DD = 10 V,
I D = 2.2 A
2.3
18
2.3
5.1
0.6
1.0
10
33
10
7.2
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics
I S
Maximum Continuous Drain-Source Diode Forward Current
0.35
A
V SD
Source to Drain Diode Forward Voltage
V GS = 0 V, I S = 0.35 A
(Note 2)
0.6
1.2
V
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
I F = 2.2 A, di/dt = 100 A/ μ s
11
2.5
20
10
ns
nC
Notes:
1. R θ JA is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R θ JC is guaranteed by design while R θ JA is determined by
the user's board design.
a. 300 °C/W when mounted
on a 1 in 2 pad of 2 oz copper.
b. 333 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 30 0 μ s, Duty cycle < 2.0%.
3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
?2009 Fairchild Semiconductor Corporation
FDG410NZ Rev . B
2
www.fairchildsemi.com
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