参数资料
型号: FDG410NZ
厂商: Fairchild Semiconductor
文件页数: 3/7页
文件大小: 0K
描述: MOSFET N-CH SINGLE 20V SC70-6
标准包装: 3,000
系列: PowerTrench®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 2.2A
开态Rds(最大)@ Id, Vgs @ 25° C: 70 毫欧 @ 2.2A,4.5V
Id 时的 Vgs(th)(最大): 1V @ 250µA
闸电荷(Qg) @ Vgs: 7.2nC @ 4.5V
输入电容 (Ciss) @ Vds: 535pF @ 10V
功率 - 最大: 380mW
安装类型: 表面贴装
封装/外壳: 6-TSSOP,SC-88,SOT-363
供应商设备封装: SC-70-6
包装: 带卷 (TR)
Typical Characteristics T J = 25 °C unless otherwise noted
6
5
V GS = 4.5 V
V GS = 3.5 V
V GS = 2.5 V
2.5
V GS = 1.5 V
4
V GS = 1.8 V
V GS = 1.5 V
2.0
3
2
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
1.5
V GS = 3.5 V
V GS = 1.8 V
V GS = 2.5 V
1.0
1
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V GS = 4.5 V
0
0
0.2
0.4
0.6
0.8
1.0
0.5
1
2
3
4
5
6
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
1.6
I D , DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
180
1.4
1.2
1.0
0.8
I D = 2.2 A
V GS = 4.5 V
160
140
120
100
80
60
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
I D = 1.1 A
T J = 125 o C
T J = 25 o C
0.6
-75
-50
-25 0 25 50 75 100 125 150
T J , JUNCTION TEMPERATURE ( o C )
40
1.0
1.5
2.0 2.5 3.0 3.5 4.0
V GS , GATE TO SOURCE VOLTAGE (V)
4.5
Figure 3. Normalized On Resistance
vs Junction Temperature
6
PULSE DURATION = 80 μ s
Figure 4. On-Resistance vs Gate to
Source Voltage
6
V GS = 0 V
5
DUTY CYCLE = 0.5% MAX
4
V DS = 5 V
1
3
2
0.1
T J = 125 o C
T J = 25 o C
1
T J = 125 o C
T J = 25 o C
T J = -55 o C
T J = -55 o C
0
0.0
0.5
1.0
1.5
2.0
0.01
0.2
0.4
0.6
0.8
1.0
1.2
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
?2009 Fairchild Semiconductor Corporation
FDG410NZ Rev . B
3
www.fairchildsemi.com
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