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| 型号： | FDG332PZ |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 2.6A SC70-6 |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 产品目录绘图： | MOSFET SC70-6 Pkg |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 95 毫欧 @ 2.6A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 10.8nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 560pF @ 10V |
| 功率 - 最大： | 480mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SC-70-6 |
| 包装： | 标准包装 |
| 产品目录页面： | 1608 (CN2011-ZH PDF) |
| 其它名称： | FDG332PZDKR |
December 2008
FDG332PZ
P-Channel PowerTrench ? MOSFET
- 20V, - 2.6A, 97m
Features
General Description
tm
Max r DS(on) = 95m
Max r DS(on) = 115m
Max r DS(on) = 160m
Max r DS(on) = 330m
at V GS = -4.5V, I D = -2.6A
at V GS = -2.5V, I D = -2.2A
at V GS = -1.8V, I D = -1.9A
at V GS = -1.5V, I D = -1.0A
This P-Channel MOSFET uses Fairchild’s advanced low
voltage PowerTrench ? process. It has been optimized for
battery power management applications.
Applications
Very low level gate drive requirements allowing operation
in 1.5V circuits
Very small package outline SC70-6
RoHS Compliant
S
Battery management
Load switch
D
SC70-6
D
Pin 1
D
D
G
D
D
G
D
D
S
MOSFET Maximum Ratings T A = 25°C unless otherwise noted
Symbol
V DS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
-20
±8
Units
V
V
I D
P D
Drain Current
Power Dissipation
Power Dissipation
-Continuous
-Pulsed
(Note 1a)
(Note 1b)
-2.6
-9
0.75
0.48
A
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
° C
Thermal Characteristics
R
R
JA
JA
Thermal Resistance, Junction to Ambient Single operation
Thermal Resistance, Junction to Ambient Single operation
(Note 1a)
(Note 1b)
170
260
°C/W
Package Marking and Ordering Information
Device Marking
.2P
Device
FDG332PZ
Package
SC70-6
Reel Size
7’’
Tape Width
8 mm
Quantity
3000 units
?2008 Fairchild Semiconductor Corporation
FDG332PZ Rev.B1
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDG410NZ | MOSFET N-CH SINGLE 20V SC70-6 |
| FDG6301N_D87Z | MOSFET N-CH DUAL 25A SC70-6 |
| FDG6301N_F085 | MOSFET 2N-CH 25V 220MA SC70-6 |
| FDG6303N_D87Z | MOSFET N-CH DUAL 25V SC70-6 |
| FDG6304P_D87Z | MOSFET P-CH DUAL 25V SC70-6 |
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| FDG410NZ | 功能描述:MOSFET 20V Single NChannel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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