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| 型号： | FDG332PZ |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 2.6A SC70-6 |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 产品目录绘图： | MOSFET SC70-6 Pkg |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 95 毫欧 @ 2.6A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 10.8nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 560pF @ 10V |
| 功率 - 最大： | 480mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SC-70-6 |
| 包装： | 标准包装 |
| 产品目录页面： | 1608 (CN2011-ZH PDF) |
| 其它名称： | FDG332PZDKR |
Electrical Characteristics T J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
BV DSS
T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = -250 A, V GS = 0V
I D = -250 A, referenced to 25°C
V DS = -16V, V GS = 0V
V GS = ±8V, V DS = 0V
-20
-13
-1
±10
V
mV/°C
A
A
On Characteristics
V GS(th)
V GS(th)
T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = -250 A
I D = -250 A, referenced to 25°C
-0.4
-0.7
2.5
-1.5
V
mV/°C
V GS = -4.5V, I D = -2.6A
V GS = -2.5V, I D = -2.2A
73
90
95
115
r DS(on)
Static Drain to Source On Resistance
V GS = -1.8V, I D = -1.9A
117
160
m
V GS = -1.5V, I D = -1.0A
V GS = -4.5V, I D = -2.6A , T J = 125°C
147
100
330
133
g FS
Forward Transconductance
V DD = -5V, I D = -2.6A
9
S
Dynamic Characteristics
C iss
Input Capacitance
420
560
pF
C oss
C rss
Output Capacitance
Reverse Transfer Capacitance
V DS = -10V, V GS = 0V, f = 1MHZ
85
75
115
115
pF
pF
Switching Characteristics
t d(on)
Turn-On Delay Time
5.2
10
ns
t r
t d(off)
t f
Q g
Q gs
Q gd
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
V DD = -10V, I D = -2.6A,
V GS = -4.5V, R GEN = 6
V GS = -4.5V, V DD = -10V, I D = -2.6A
4.8
59
28
7.6
0.9
1.9
10
95
45
10.8
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain-Source Diode Forward Current
-0.6
A
V SD
t rr
Q rr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0V, I S = -0.6A
I F = 2.6A, di/dt = 100A/ s
(Note 2)
-0.7
28
8
-1.2
45
13
V
ns
nC
Notes:
1. R JA is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
JC
is guaranteed by design while R
CA is
determined by
the user's board design.
2. Pulse Test: Pulse Width < 30 0 s, Duty cycle < 2.0%.
a. 170°C/W when mounted on
a 1 in 2 pad of 2 oz copper .
b. 260°C/W when mounted on
a minimum pad of 2 oz copper.
?2008 Fairchild Semiconductor Corporation
FDG332PZ Rev.B1
2
www.fairchildsemi.com
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