参数资料
型号: FDG332PZ
厂商: Fairchild Semiconductor
文件页数: 3/6页
文件大小: 0K
描述: MOSFET P-CH 20V 2.6A SC70-6
产品变化通告: Mold Compound Change 12/Dec/2007
产品目录绘图: MOSFET SC70-6 Pkg
标准包装: 1
系列: PowerTrench®
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 2.6A
开态Rds(最大)@ Id, Vgs @ 25° C: 95 毫欧 @ 2.6A,4.5V
Id 时的 Vgs(th)(最大): 1.5V @ 250µA
闸电荷(Qg) @ Vgs: 10.8nC @ 4.5V
输入电容 (Ciss) @ Vds: 560pF @ 10V
功率 - 最大: 480mW
安装类型: 表面贴装
封装/外壳: 6-TSSOP,SC-88,SOT-363
供应商设备封装: SC-70-6
包装: 标准包装
产品目录页面: 1608 (CN2011-ZH PDF)
其它名称: FDG332PZDKR
Typical Characteristics T J = 25°C unless otherwise noted
9
2.5
V GS = -4.5V
V GS = -3V
V GS = -1.5V
6
V GS = -2.5V
V GS = -1.8V
2.0
1.5
V GS = -1.8V
V GS = -2.5V
3
V GS = -1.5V
1.0
PULSE DURATION = 80 s
DUTY CYCLE = 0.5%MAX
PULSE DURATION = 80 s
DUTY CYCLE = 0.5%MAX
V GS = -3V
V GS = -4.5V
0
0.0
0.4
0.8
1.2
1.6
2.0
0.5
0
3
6
9
-V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
-I D , DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
1.4
I D = -2.6A
V GS = -4.5V
300
250
I D = -2.6A
PULSE DURATION = 80 s
DUTY CYCLE = 0.5%MAX
1.2
200
1.0
0.8
150
100
T J = 125 o C
0.6
-50
-25
0 25 50 75 100 125
T J , JUNCTION TEMPERATURE ( o C )
150
50
1
T J = 25 o C
2 3 4
-V GS , GATE TO SOURCE VOLTAGE (V)
5
Figure 3. Normalized On - Resistance
vs Junction Temperature
9
PULSE DURATION = 80 s
DUTY CYCLE = 0.5%MAX
V DD = -5V
6
Figure 4. On-Resistance vs Gate to
Source Voltage
4
V GS = 0V
1
T J = 150 o C
0.1
T J = 25 o C
3
T J = 150 o C
T J =
25 o C
0.01
T J = -55 o C
0
0.0
0.5
1.0
T J = -55 o C
1.5
2.0
2.5
1E-3
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
-V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
?2008 Fairchild Semiconductor Corporation
FDG332PZ Rev.B1
3
www.fairchildsemi.com
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