参数资料
型号: FDI047AN08A0
厂商: Fairchild Semiconductor
文件页数: 3/12页
文件大小: 0K
描述: MOSFET N-CH 75V 80A TO-262AB
标准包装: 400
系列: PowerTrench®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 75V
电流 - 连续漏极(Id) @ 25° C: 80A
开态Rds(最大)@ Id, Vgs @ 25° C: 4.7 毫欧 @ 80A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 138nC @ 10V
输入电容 (Ciss) @ Vds: 6600pF @ 25V
功率 - 最大: 310W
安装类型: 通孔
封装/外壳: TO-262-3,长引线,I²Pak,TO-262AA
供应商设备封装: I2PAK
包装: 管件
Typical Characteristics T C = 25°C unless otherwise noted
1.2
200
CURRENT LIMITED
1.0
0.8
0.6
0.4
160
120
80
BY PACKAGE
0.2
40
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
T C , CASE TEMPERATURE ( o C)
Figure 1. Normalized Power Dissipation vs Case
Temperature
2
DUTY CYCLE - DESCENDING ORDER
T C , CASE TEMPERATURE ( o C)
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
1
0.5
0.2
0.1
0.05
0.02
0.01
P DM
0.1
t 1
t 2
NOTES:
0.01
SINGLE PULSE
DUTY FACTOR: D = t 1 /t 2
PEAK T J = P DM x Z θ JC x R θ JC + T C
10 -5
10 -4
10 -3
10 -2
10 -1
10 0
10 1
t, RECTANGULAR PULSE DURATION (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
2000
1000
T C = 25 o C
FOR TEMPERATURES
ABOVE 25 o C DERATE PEAK
CURRENT AS FOLLOWS:
V GS = 10V
I = I 25
175 - T C
150
TRANSCONDUCTANCE
MAY LIMIT CURRENT
100
50
IN THIS REGION
10 -5
10 -4
10 -3
10 -2
10 -1
10 0
10 1
t, PULSE WIDTH (s)
Figure 4. Peak Current Capability
? 2003 Fairchild Semiconductor Corporation
FDP047AN08A0 / FDH047AN08A0 Rev. C2
3
www.fairchildsemi.com
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