参数资料
型号: FDI047AN08A0
厂商: Fairchild Semiconductor
文件页数: 5/12页
文件大小: 0K
描述: MOSFET N-CH 75V 80A TO-262AB
标准包装: 400
系列: PowerTrench®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 75V
电流 - 连续漏极(Id) @ 25° C: 80A
开态Rds(最大)@ Id, Vgs @ 25° C: 4.7 毫欧 @ 80A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 138nC @ 10V
输入电容 (Ciss) @ Vds: 6600pF @ 25V
功率 - 最大: 310W
安装类型: 通孔
封装/外壳: TO-262-3,长引线,I²Pak,TO-262AA
供应商设备封装: I2PAK
包装: 管件
Typical Characteristics T C = 25°C unless otherwise noted
1.2
V GS = V DS , I D = 250 μ A
1.15
I D = 250 μ A
1.10
1.0
1.05
0.8
1.00
0.6
0.95
0.4
0.90
-80
-40
0 40 80 120 160
200
-80
-40
0
40
80
120
160
200
T J , JUNCTION TEMPERATURE ( o C)
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
10000
C ISS = C GS + C GD
T J , JUNCTION TEMPERATURE ( o C)
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10
V DD = 40V
8
C OSS ? C DS + C GD
6
1000
C RSS = C GD
4
WAVEFORMS IN
2
DESCENDING ORDER:
I D = 80A
100
V GS = 0V, f = 1MHz
0
I D = 10A
0.1
1
10
75
0
25
50
75
100
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 13. Capacitance vs Drain to Source
Voltage
Q g , GATE CHARGE (nC)
Figure 14. Gate Charge Waveforms for Constant
Gate Currents
? 2003 Fairchild Semiconductor Corporation
FDP047AN08A0 / FDH047AN08A0 Rev. C2
5
www.fairchildsemi.com
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FDI100 制造商:DEC 制造商全称:DEC 功能描述:1 AMP FAST RECOVERY BRIDGE RECTIFIERS
FDI101 制造商:DEC 制造商全称:DEC 功能描述:1 AMP FAST RECOVERY BRIDGE RECTIFIERS
FDI102 制造商:DEC 制造商全称:DEC 功能描述:1 AMP FAST RECOVERY BRIDGE RECTIFIERS
FDI10-250L 功能描述:端子 12-10AWG .25 F 50 PK RoHS:否 制造商:AVX 产品:Junction Box - Wire to Wire 系列:9826 线规:26-18 接线柱/接头大小: 绝缘: 颜色:Red 型式:Female 触点电镀:Tin over Nickel 触点材料:Beryllium Copper, Phosphor Bronze 端接类型:Crimp