参数资料
型号: FDMA420NZ
厂商: Fairchild Semiconductor
文件页数: 1/7页
文件大小: 0K
描述: MOSFET N-CH 20V 5.7A MICROFET
产品目录绘图: MicroFET 2x2, SC-75 Single
标准包装: 1
系列: PowerTrench®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 5.7A
开态Rds(最大)@ Id, Vgs @ 25° C: 30 毫欧 @ 5.7A,4.5V
Id 时的 Vgs(th)(最大): 1.5V @ 250µA
闸电荷(Qg) @ Vgs: 12nC @ 4.5V
输入电容 (Ciss) @ Vds: 935pF @ 10V
功率 - 最大: 2.4W
安装类型: 表面贴装
封装/外壳: 6-WDFN 裸露焊盘
供应商设备封装: 6-MicroFET(2x2)
包装: 标准包装
产品目录页面: 1609 (CN2011-ZH PDF)
其它名称: FDMA420NZDKR
January 2014
FDMA420NZ
Single N-Channel 2.5V Specified
20V, 5.7A, 30m :
PowerTrench ? MOSFET
tm
General Description
This Single N-Channel MOSFET has been designed using
Fairchild Semiconductor’s advanced Power Trench
process to optimize the R DS (on) @V GS =2.5V on special
MicroFET leadframe.
Applications
? Li-lon Battery Pack
Features
? R DS(on) = 30m : @ V GS = 4.5 V, I D = 5.7A
? R DS(on) = 40m : @ V GS = 2.5 V, I D = 5.0A
? Low Profile-0.8mm maximum-in the new package
MicroFET 2x2 mm
? HBM ESD protection level > 2.5k V typical (Note 3)
? Free from halogenated compounds and antimony oxides
? RoHS Compliant
Pin 1
D
D
G
Drain
D
D
S
Source
S
D
D
4
5
6
Bottom Drain Contact
3
2
1
G
D
D
MicroFET Bottom View 2X2
Absolute Maximum Ratings T A = 25°C unless otherwise noted
Symbol
V DSS
V GSS
Drain-Source Voltage
Gate-Source Voltage
Parameter
Ratings
20
r 12
Units
V
V
I D
Drain Current
-Continuous
-Pulsed
(Note 1a)
5.7
24
A
P D
T J , T STG
Power dissipation (Steady State)
Operating and Storage Junction Temperature Range
(Note 1a)
(Note 1b)
2.4
0.9
-55 to +150
W
o C
Thermal Characteristics
R T JA
R T JA
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
52
145
o C/W
Package Marking and Ordering Information
Device Marking
420
Device
FDMA420NZ
Reel Size
7”
Tape Width
8 mm
Quantity
3000 units
?200 9 Fairchild Semiconductor Corporation
FDMA420NZ Rev B 5
1
www.fairchildsemi.com
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