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| 型号： | FDMA510PZ |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 7.8A 6-MICROFET |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 7.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 30 毫欧 @ 7.8A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 27nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1480pF @ 10V |
| 功率 - 最大： | 900mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-WDFN 裸露焊盘 |
| 供应商设备封装： | MicroFET 2x2 |
| 包装： | 标准包装 |
| 其它名称： | FDMA510PZDKR |
April 2009
FDMA510PZ
Single P-Channel PowerTrench ? MOSFET
–20V, –7.8A, 30m
tm
Features
General Description
Max r DS(on) = 30m
Max r DS(on) = 37m
Max r DS(on) = 50m
Max r DS(on) = 90m
at V GS = –4.5V, I D = –7.8A
at V GS = –2.5V, I D = –6.6A
at V GS = –1.8V, I D = –5.5A
at V GS = –1.5V, I D = –2.0A
This device is designed specifically for battery charge or load
switching in cellular handset and other ultraportable applications.
It features a MOSFET with low on-state resistance.
The MicroFET 2X2 package offers exceptional thermal
performance for its physical size and is well suited to linear mode
Low profile - 0.8mm maximum - in the new package MicroFET
2X2 mm
HBM ESD protection level > 3KV typical (Note 3)
Free from halogenated compounds and antimony oxides
RoHS Compliant
applications.
Pin 1
D
D
G
Bottom Drain Contact
Drain
Source
D
D
G
1
2
3
6
5
4
D
D
S
D
D
S
MicroFET 2X2 (Bottom View)
MOSFET Maximum Ratings T A = 25°C unless otherwise noted
Symbol
V DS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
–20
±8
Units
V
V
I D
Drain Current
-Continuous
-Pulsed
(Note 1a)
–7.8
–24
A
P D
T J , T STG
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
(Note 1a)
(Note 1b)
2.4
0.9
–55 to +150
W
° C
Thermal Characteristics
R
R
JA
JA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1a)
(Note 1b)
52
145
°C/W
Package Marking and Ordering Information
Device Marking
510
Device
FDMA510PZ
Package
MicroFET 2X2
Reel Size
7’’
Tape Width
8mm
Quantity
3000units
?2009 Fairchild Semiconductor Corporation
FDMA510PZ Rev.B2
1
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDMA520PZ | 功能描述:MOSFET -20V P-CH PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMA520PZ_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Single P-Channel PowerTrench㈢ MOSFET -20V, -7.3A, 30mヘ |
| FDMA530PZ | 功能描述:MOSFET -30V P-Ch PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMA530PZ_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Single P-Channel PowerTrench㈢ MOSFET |
| FDMA6023PZT | 功能描述:MOSFET Dual P-Ch, -20V PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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