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参数资料
| 型号： | FDMA6023PZT |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH DUAL 20V 6MICROFET |
| 产品目录绘图： | MicorFET 2x2, SC-75 Dual |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 60 毫欧 @ 3.6A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 17nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 885pF @ 10V |
| 功率 - 最大： | 700mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-UDFN 裸露焊盘 |
| 供应商设备封装： | 6-MicroFET（2x2） |
| 包装： | 标准包装 |
| 其它名称： | FDMA6023PZTDKR |
June 2009
FDMA6023PZT
Dual P-Channel PowerTrench ? MOSFET
-20 V, -3.6 A, 60 m ?
Features
Max r DS(on) = 60 m ? at V GS = -4.5 V, I D = -3.6 A
Max r DS(on) = 80 m ? at V GS = -2.5 V, I D = -3.0 A
Max r DS(on) = 110 m ? at V GS = -1.8 V, I D = -2.0 A
Max r DS(on) = 170 m ? at V GS = -1.5 V, I D = -1.0 A
Low Profile-0.55 mm maximum - in the new package
MicroFET 2x2 mm Thin
HBM ESD protection level > 2.4 kV typical (Note 3)
RoHS Compliant
General Description
This device is designed specifically as a single package solution
for the battery charge switch in cellular handset and other
ultraportable applications. It features two independent
P-Channel MOSFETs with low on-state resistance for minimum
conduction losses. When connected in the typical common
source configuration, bi-directional current flow is possible.
The MicroFET 2X2 Thin package offers exceptional thermal
performance for it’s physical size and is well suited to linear
mode applications.
Applications
Free from halogenated compounds and antimony oxides
Battery protection
Battery management
Load switch
Pin 1
S1
G1
D2
S1
1
Q1
6
D1
D1
D2
G1
D2
2
3
5
4
G2
S2
D1
G2 S2
Q2
MicroFET 2x2
MOSFET Maximum Ratings T A = 25 °C unless otherwise noted
Symbol
V DS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
-20
±8
Units
V
V
I D
P D
-Continuous
-Pulsed
Power Dissipation
Power Dissipation
T A = 25 °C
T A = 25 °C
T A = 25 °C
(Note 1a)
(Note 1a)
(Note 1b)
-3.6
-15
1.4
0.7
A
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R θ JA
Thermal Resistance for Single Operation, Junction to Ambient
(Note 1a)
86
R θ JA
R θ JA
R θ JA
Thermal Resistance for Single Operation, Junction to Ambient
Thermal Resistance for Dual Operation, Junction to Ambient
Thermal Resistance for Dual Operation, Junction to Ambient
(Note 1b)
(Note 1c)
(Note 1d)
173
69
151
°C/W
Package Marking and Ordering Information
Device Marking
623
Device
FDMA6023PZT
Package
MicroFET 2X2 Thin
Reel Size
7 ’’
Tape Width
8mm
Quantity
3000 units
?2009 Fairchild Semiconductor Corporation
FDMA6023PZT Rev.B1
1
www.fairchildsemi.com
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