参数资料
型号: FDMA6023PZT
厂商: Fairchild Semiconductor
文件页数: 4/7页
文件大小: 0K
描述: MOSFET P-CH DUAL 20V 6MICROFET
产品目录绘图: MicorFET 2x2, SC-75 Dual
标准包装: 1
系列: PowerTrench®
FET 型: 2 个 P 沟道(双)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 3.6A
开态Rds(最大)@ Id, Vgs @ 25° C: 60 毫欧 @ 3.6A,4.5V
Id 时的 Vgs(th)(最大): 1.5V @ 250µA
闸电荷(Qg) @ Vgs: 17nC @ 4.5V
输入电容 (Ciss) @ Vds: 885pF @ 10V
功率 - 最大: 700mW
安装类型: 表面贴装
封装/外壳: 6-UDFN 裸露焊盘
供应商设备封装: 6-MicroFET(2x2)
包装: 标准包装
其它名称: FDMA6023PZTDKR
Typical Characteristics T J = 25 °C unless otherwise noted
15
3.0
V GS = -4.5V
V GS = -2.0V
PULSE DURATION = 300 μ s
V GS = -3.0V
12 V GS = -2.5V
V GS = -1.8V
2.5
V GS = -1.5V
DUTY CYCLE = 2.0% MAX
9
2.0
V GS = -1.8V
V GS = -2.0V
6
3
V GS = -1.5V
1.5
1.0
0
PULSE DURATION = 300 μ s
DUTY CYCLE = 2.0% MAX
0.5
V GS = -2.5V
V GS = -3.0V
V GS = -4.5V
0.0
0.5
1.0
1.5
2.0
0
3
6
9
12
15
-V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
1.6
-I D , DRAIN CURRENT(A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
200
1.4
1.2
I D = -3.6A
V GS = -4.5V
160
120
I D = -3.6A
PULSE DURATION = 300 μ s
DUTY CYCLE = 2.0% MAX
T J = 125 o C
1.0
0.8
80
40
T J = 25 o C
0.6
-75
-50
-25 0 25 50 75 100 125 150
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
T J , JUNCTION TEMPERATURE ( o C )
Figure 3. Normalized On- Resistance
vs Junction Temperature
15
PULSE DURATION = 300 μ s
DUTY CYCLE = 2.0% MAX
-V GS , GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
10
V GS = 0V
12
V DS = -5V
1
T J = 125 o C
9
6
0.1
T J = 25 o C
3
T J = 125 o C
T J = 25 o C
T J = -55 o C
0.01
T J = -55 o C
0
0.0
0.5
1.0
1.5
2.0
2.5
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
-V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
?2009 Fairchild Semiconductor Corporation
FDMA6023PZT Rev.B1
4
www.fairchildsemi.com
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