参数资料
型号: FDMA7632
厂商: Fairchild Semiconductor
文件页数: 1/6页
文件大小: 0K
描述: MOSFET N-CH 30V 9A MICROFET2X2
标准包装: 1
系列: PowerTrench®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 9A
开态Rds(最大)@ Id, Vgs @ 25° C: 19 毫欧 @ 9A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 13nC @ 10V
输入电容 (Ciss) @ Vds: 760pF @ 15V
功率 - 最大: 900mW
安装类型: 表面贴装
封装/外壳: 6-WDFN
供应商设备封装: 6-MicroFET(2x2)
包装: 标准包装
其它名称: FDMA7632DKR
January 2014
FDMA7632
Single N-Channel PowerTrench ? MOSFET
30 V, 9 A, 19 m Ω
Features
Max r DS(on) = 19 m Ω at V GS = 10 V, I D = 9 A
Max r DS(on) = 30 m Ω at V GS = 4.5 V, I D = 7 A
Low Profile - 0.8 mm maximum - in the new package
MicroFET 2x2 mm
Free from halogenated compounds and antimony oxides
RoHS compliant
General Description
This device has been designed to provide maximum efficiency
and thermal performance for synchronous buck converters. The
low r DS(on) and gate charge provide excellent switching
performance.
Application
DC – DC Buck Converters
Pin 1
D
D
G
D
1
Bottom Drain Contact
6
D
Drain
Source
D
D
S
D
G
2
3
5
4
D
S
MicroFET 2X2 (Bottom View)
MOSFET Maximum Ratings T A = 25 °C unless otherwise noted
Symbol
V DSS
V GSS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
30
±20
Units
V
V
I D
P D
Drain Current -Continuous
-Pulsed
Power Dissipation
Power Dissipation
T A = 25 °C
T A = 25 °C
T A = 25 °C
(Note 1a)
(Note 1a)
(Note 1b)
9
24
2.4
0.9
A
W
T J , T STG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
R θ JA
R θ JA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1a)
(Note 1b)
52
145
°C/W
Package Marking and Ordering Information
Device Marking
632
Device
FDMA7632
Package
MicroFET 2x2
Reel Size
7 ’’
Tape Width
8 mm
Quantity
3000 units
?2012 Fairchild Semiconductor Corporation
FDMA7632 Rev.C 2
1
www.fairchildsemi.com
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