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| 型号： | FDMC8462 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 40V 14A POWER33 |
| 产品目录绘图： | 8-MLP, Power33, 56 Dual |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 14A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 5.8 毫欧 @ 13.5A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 43nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2660pF @ 20V |
| 功率 - 最大： | 2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PQFN，Power33 |
| 供应商设备封装： | Power33 |
| 包装： | 标准包装 |
| 产品目录页面： | 1609 (CN2011-ZH PDF) |
| 其它名称： | FDMC8462DKR |
Electrical Characteristics T J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
? BV DS S
? T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = 250 μ A, V GS = 0V
I D = 250 μ A, referenced to 25°C
V GS = 0V, V DS = 32V,
V GS = ±20V, V DS = 0V
40
31
1
±100
V
mV/°C
μ A
nA
On Characteristics
V GS(th)
? V GS(th )
? T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = 250 μ A
I D = 250 μ A, referenced to 25°C
1.0
2.0
-6.6
3.0
V
mV/°C
V GS = 10V, I D = 13.5A
4.7
5.8
r DS(on)
Static Drain to Source On Resistance
V GS = 4.5V, I D = 11.8A
6.4
8.0
m ?
V GS = 10V, I D = 13.5A, T J = 125°C
7.1
9.3
g FS
Forward Transconductance
V DD = 5V, I D = 13.5A
60
S
Dynamic Characteristics
C iss
C oss
C rss
R g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 20V, V GS = 0V,
f = 1MHz
f = 1MHz
2000
545
80
2.7
2660
725
120
pF
pF
pF
?
Switching Characteristics
t d(on)
Turn-On Delay Time
12
21
ns
t r
t d(off)
t f
Q g
Q g
Q gs
Q gd
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
V DD = 20V, I D = 13.5A,
V GS = 10V, R GEN = 6 ?
V GS = 0V to 10V
V GS = 0V to 4.5V V DD = 20V,
I D = 13.5A
4
27
3
30
15
6
5
10
43
10
43
21
ns
ns
ns
nC
nC
nC
nC
Drain-Source Diode Characteristics
V SD
Source to Drain Diode Forward Voltage
V GS = 0V, I S = 13.5A
V GS = 0V, I S = 1.7A
(Note 2)
(Note 2)
0.8
0.7
1.3
1.2
V
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
I F = 13.5A, di/dt = 100A/ μ s
35
20
57
32
ns
nC
NOTES:
1. R θ JA is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R θ JC is guaranteed by design while R θ CA is determined by
the user's board design.
a. 53°C/W when mounted on a
1 in 2 pad of 2 oz copper
2. Pulse Test: Pulse Width < 30 0 μ s, Duty cycle < 2.0%.
3. Starting T J = 25 o C; N-ch: L = 3 mH, I AS = 12A, V DD = 40V, V GS = 10V
b. 125°C/W when mounted on a
minimum pad of 2 oz copper
FDMC8462 Rev.C
2
www.fairchildsemi.com
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