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参数资料
| 型号： | FDMC8878 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 9.6A POWER33 |
| 产品变化通告： | Mold Compound Change 17/March/2008 |
| 产品目录绘图： | 8-MLP, Power33, 56 Dual |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 9.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 14 毫欧 @ 9.6A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 26nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1230pF @ 15V |
| 功率 - 最大： | 2.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PowerVDFN |
| 供应商设备封装： | 8-Power33（3x3） |
| 包装： | 标准包装 |
| 产品目录页面： | 1609 (CN2011-ZH PDF) |
| 其它名称： | FDMC8878DKR |
Electrical Characteristics T J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
' BV DS S
' T J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
I D = 250 P A, V GS = 0V
I D = 250 P A, referenced to 25°C
30
20
V
mV/° C
I DSS
Zero Gate Voltage Drain Current
V DS = 24V,
V GS = 0V
T J = 125°C
1
100
P A
I GSS
Gate to Source Leakage Current
V GS = ±20V, V DS = 0V
±100
nA
On Characteristics
V GS(th)
' V GS(th )
' T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = 250 P A
I D = 250 P A, referenced to 25°C
1
1.7
-5.7
3
V
mV/°C
V GS = 10V, I D = 9.6A
9.6
14.0
r DS(on)
Drain to Source On Resistance
V GS = 4.5V, I D = 8.7A
12.1
17.0
m :
V GS = 10V, I D = 9.6A , T J = 125°C
13.5
20.0
g FS
Forward Transconductance
V DS = 5V, I D = 9.6A
35
S
Dynamic Characteristics
C iss
C oss
C rss
R g
Input Capacitance
Output Cap acitance
Reverse T ransfer Capacitance
Gate Resistance
V DS = 15V, V GS = 0V,
f = 1MHz
f = 1MHz
1000
183
118
1.1
1 230
255
180
pF
pF
pF
:
Switching Characteristics
t d(on)
t r
t d(off)
t f
Q g(TOT)
Q gs
Q gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V DD = 15V, I D = 9.6A
V GS = 10V, R GEN = 6 :
V GS = 10V , V DD = 15V ,
I D = 9.6A
8
4
20
3
18
2.8
3.9
16
10
36
10
26
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics
V SD
Source to Drain Diode Forward Voltage
V GS = 0V, I S = 9.6A
(Note 2)
0.8
1.2
V
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
I F = 9.6A, di/dt = 100A/ P s
23
14
35
21
ns
nC
Notes:
1: R T JA is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R T JC is guaranteed by design while R T CA is determined by
the user's board design.
a. 60°C/W when mounted on
a 1 in 2 pad of 2 oz copper
2: Pulse Test: Pulse Width < 30 0 P s, Duty cycle < 2.0%.
b. 135°C/W when mounted on a
minimum pad of 2 oz copper
?20 1 2 Fairchild Semiconductor Corporation
FDMC8878 Rev. D 5
2
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDMC8878 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SMD MLP |
| FDMC8878_12 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Power Trench?? MOSFET 30V, 16.5A, 14m |
| FDMC8878_F126 | 功能描述:MOSFET 30V N-CHAN 9.6A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMC8878_F127 | 功能描述:MOSFET 30V N-CHAN 9.6A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMC8878_NBSE003 | 功能描述:MOSFET 30V N-CH PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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