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| 型号： | FDMC8884 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 9A POWER33 |
| 产品目录绘图： | MOSFET MLP 3.3x3.3 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 19 毫欧 @ 9A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 14nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 685pF @ 15V |
| 功率 - 最大： | 2.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-MLP，Power33 |
| 供应商设备封装： | MLP（3.3x3.3） |
| 包装： | 标准包装 |
| 产品目录页面： | 1609 (CN2011-ZH PDF) |
| 其它名称： | FDMC8884DKR |
Electrical Characteristics T J = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
Δ BV DSS
Δ T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = 250 μ A, V GS = 0 V
I D = 250 μ A, referenced to 25 °C
V DS = 24 V, V GS = 0 V
T J = 125 °C
V GS = ±20 V, V DS = 0 V
30
22
1
250
±100
V
mV/°C
μ A
nA
On Characteristics
V GS(th)
Δ V GS(th)
Δ T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = 250 μ A
I D = 250 μ A, referenced to 25 °C
1.4
1.9
-6
2.5
V
mV/°C
V GS = 10 V, I D = 9.0 A
16
19
r DS(on)
Static Drain to Source On Resistance
V GS = 4.5 V, I D = 7.2 A
22
30
m Ω
V GS = 10 V, I D = 9.0 A, T J = 125 °C
22
30
g FS
Forward Transconductance
V DD = 5 V, I D = 9.0 A
24
S
Dynamic Characteristics
C iss
C oss
C rss
R g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 15 V, V GS = 0 V,
f = 1 MHz
513
110
76
1.4
685
150
115
2.1
pF
pF
pF
Ω
Switching Characteristics
t d(on)
Turn-On Delay Time
6
12
ns
t r
t d(off)
t f
Q g(TOT)
Q gs
Q gd
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Total Gate Charge
Gate to Drain “Miller” Charge
V DD = 15 V, I D = 9.0 A,
V GS = 10 V, R GEN = 6 Ω
V GS = 0 V to 10 V
V GS = 0 V to 4.5 V V DD = 15 V
I D = 9.0 A
2
15
2
10
5.0
1.8
2.2
10
27
10
14
7.0
ns
ns
ns
nC
nC
nC
nC
Drain-Source Diode Characteristics
V SD
Source to Drain Diode Forward Voltage
V GS = 0 V, I S = 9.0 A
V GS = 0 V, I S = 1.6 A
(Note 2)
(Note 2)
0.86
0.76
1.2
1.2
V
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
I F = 9.0 A, di/dt = 100 A/ μ s
13
3
18
10
ns
nC
NOTES:
1. R θ JA is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R θ JC is guaranteed by design while R θ CA is determined by
the user's board design.
a. 53 °C/W when mounted on
a 1 in 2 pad of 2 oz copper
b.125 °C/W when mounted on
a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μ s, Duty cycle < 2.0 %.
3. E AS of 24 mJ is based on starting T J = 25 ° C, L = 1 mH, I AS = 7 A, V DD = 30 V, V GS = 10 V. 100% test at L = 3 mH, I AS = 4 A .
?2012 Fairchild Semiconductor Corporation
FDMC8884 Rev.E3
2
www.fairchildsemi.com
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