参数资料
型号: FDMC8884
厂商: Fairchild Semiconductor
文件页数: 3/7页
文件大小: 0K
描述: MOSFET N-CH 30V 9A POWER33
产品目录绘图: MOSFET MLP 3.3x3.3
标准包装: 1
系列: PowerTrench®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 9A
开态Rds(最大)@ Id, Vgs @ 25° C: 19 毫欧 @ 9A,10V
Id 时的 Vgs(th)(最大): 2.5V @ 250µA
闸电荷(Qg) @ Vgs: 14nC @ 10V
输入电容 (Ciss) @ Vds: 685pF @ 15V
功率 - 最大: 2.3W
安装类型: 表面贴装
封装/外壳: 8-MLP,Power33
供应商设备封装: MLP(3.3x3.3)
包装: 标准包装
产品目录页面: 1609 (CN2011-ZH PDF)
其它名称: FDMC8884DKR
Typical Characteristics T J = 25 °C unless otherwise noted
40
V GS = 10 V
PULSE DURATION = 80 μ s
4.0
V GS = 3 V
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
3.5
DUTY CYCLE = 0.5% MAX
30
V GS = 4.5 V
V GS = 4 V
3.0
V GS = 3.5 V
V GS = 4 V
20
V GS = 6 V
2.5
10
V GS = 3.5 V
2.0
1.5
1.0
V GS = 4.5 V
0
V GS = 3 V
0.5
V GS = 6 V
V GS = 10 V
0
1
2
3
0
10 20
30
40
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
1.6
80
I D , DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
I D = 9.0 A
I D = 9.0 A
PULSE DURATION = 80 μ s
1.4
V GS = 10 V
70
DUTY CYCLE = 0.5% MAX
60
1.2
50
1.0
40
T J = 125 o C
30
0.8
20
0.6
-75
-50
-25
0
25
50
75
100 125 150
10
2
4
T J = 25 o C
6
8
10
T J , JUNCTION TEMPERATURE ( o C )
Figure 3. Normalized On- Resistance
vs Junction Temperature
40
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
100
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
V GS = 0 V
30
20
V DS = 5 V
10
1
T J = 150 o C
T J = 25 o C
0.1
T J = 150 o C
T J = 25 o C
10
0
T J = -55 o C
0.01
0.001
T J = -55 o C
1
2
3
4
5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
?2012 Fairchild Semiconductor Corporation
FDMC8884 Rev.E3
3
www.fairchildsemi.com
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