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参数资料
| 型号： | FDME1024NZT |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 3.8A 6-MICROFET |
| 标准包装： | 5,000 |
| 系列： | PowerTrench® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 66 毫欧 @ 3.4A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 4.2nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 300pF @ 10V |
| 功率 - 最大： | 600mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-WDFN 裸露焊盘 |
| 供应商设备封装： | 6-MicroFET（1.6x1.6） |
| 包装： | 带卷 (TR) |
Electrical Characteristics T J = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
Δ BV DS S
Δ T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = 250 μ A, V GS = 0 V
I D = 250 μ A, referenced to 25 °C
V DS = 16 V, V GS = 0 V
V GS = ±8 V, V DS = 0 V
20
16
1
±10
V
mV/°C
μ A
μ A
On Characteristics
V GS(th)
Δ V GS(th)
Δ T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = 250 μ A
I D = 250 μ A, referenced to 25 °C
0.4
0.7
-3
1.0
V
mV/°C
V GS = 4.5 V, I D = 3.4 A
V GS = 2.5 V, I D = 2.9 A
55
68
66
86
r DS(on)
Static Drain to Source On Resistance
V GS = 1.8 V, I D = 2.5 A
85
113
m Ω
V GS = 1.5 V, I D = 2.1 A
V GS = 4.5 V, I D = 3.4 A, T J = 125 °C
106
76
160
112
g FS
Forward Transconductance
V DD = 4.5 V, I D = 3.4 A
9
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 10 V, V GS = 0 V,
f = 1 MHz
225
40
25
300
55
40
pF
pF
pF
Switching Characteristics
t d(on)
Turn-On Delay Time
4.5
10
ns
t r
t d(off)
t f
Q g
Q gs
Q gd
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V DD = 10 V, I D = 1 A,
V GS = 4.5 V, R GEN = 6 Ω
V DD = 10 V, I D = 3.4 A,
V GS = 4.5 V
2
15
1.7
3
0.4
0.6
10
27
10
4.2
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics
V SD
Source to Drain Diode Forward Voltage
V GS = 0 V, I S = 0.9 A
(Note 2)
0.7
1.2
V
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
I F = 3.4 A, di/dt = 100 A/ μ s
8.5
1.4
17
10
ns
nC
NOTES:
1. R θ JA is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R θ JC is guaranteed by design while R θ CA is determined by
the user's board design.
a. 90 °C/W when mounted on
a 1 in 2 pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 μ s, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied.
b. 195 °C/W when mounted on a
minimum pad of 2 oz copper.
FDME1024NZT Rev.C1
2
www.fairchildsemi.com
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| FDME1024NZT ENG | 制造商:Fairchild Semiconductor Corporation 功能描述: |
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| FDME430NT | 功能描述:MOSFET 30V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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