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参数资料
| 型号： | FDMS0312S |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 19A POWER56 |
| 标准包装： | 3,000 |
| 系列： | PowerTrench®, SyncFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 19A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 4.4 毫欧 @ 18A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 46nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2820pF @ 15V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PQFN，Power56 |
| 供应商设备封装： | Power56 |
| 包装： | 带卷 (TR) |
Electrical Characteristics T J = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
BV DSS
T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current, Forward
I D = 1 mA, V GS = 0 V
I D = 10 mA, referenced to 25 °C
V DS = 24 V, V GS = 0 V
V GS = 20 V, V DS = 0 V
30
18
500
100
V
mV /° C
A
nA
On Characteristics (Note 2)
V GS(th)
V GS(th)
T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = 1 mA
I D = 10 mA, referenced to 25 °C
1.2
1.9
-5
3.0
V
mV/°C
V GS = 10 V, I D = 18 A
3.6
4. 9
r DS(on)
Static Drain to Source On Resistance
V GS = 4.5 V, I D = 14 A
4.7
5.8
m
V GS = 10 V, I D = 18 A, T J = 125 °C
5
6.2
g FS
Forward Transconductance
V DS = 5 V, I D = 18 A
97
S
Dynamic Characteristics
C iss
C oss
C rss
R g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 15 V, V GS = 0 V,
f = 1 MHz
2120
735
90
1.1
2820
975
135
2.2
pF
pF
pF
Switching Characteristics
t d(on)
Turn-On Delay Time
12
21
ns
t r
t d(off)
t f
Q g
Q g
Q gs
Q gd
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V DD = 15 V, I D = 18 A,
V GS = 10 V, R GEN = 6
V GS = 0 V to 10 V
V GS = 0 V to 4.5 V V DD = 15 V,
I D = 18 A
5
28
4
33
15
6.5
4.0
10
44
10
46
22
ns
ns
ns
nC
nC
nC
nC
Drain-Source Diode Characteristics
V SD
Source to Drain Diode Forward Voltage
V GS = 0 V, I S = 2 A
V GS = 0 V, I S = 18 A
(Note 2)
(Note 2)
0.48
0.80
0.7
1.2
V
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
I F = 18 A, di/dt = 300 A/ s
26
26
42
42
ns
nC
Notes :
1. R JA is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
JC
is guaranteed by design while R
CA is
determined by
the user's board design.
a. 50 °C/W when mounted on a
1 in 2 pad of 2 oz copper.
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 30 0 s, Duty cycle < 2.0%.
3. E AS of 60 mJ is based on starting T J = 25 ° C, L = 1 mH, I AS = 11 A, V DD = 27 V, V GS = 10 V. 100% test at L = 0.3 mH, I AS = 16 A.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
FDMS031 2 S Rev.D
2
www.fairchildsemi.com
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