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参数资料
| 型号： | FDMS0312S |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 3/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 19A POWER56 |
| 标准包装： | 3,000 |
| 系列： | PowerTrench®, SyncFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 19A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 4.4 毫欧 @ 18A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 46nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2820pF @ 15V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PQFN，Power56 |
| 供应商设备封装： | Power56 |
| 包装： | 带卷 (TR) |
Typical Characteristics T J = 25 °C unless otherwise noted
90
12
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
10
V GS = 3 V
PULSE DURATION = 80 s
60
30
V GS = 10 V
V GS = 4.5 V
V GS = 4 V
V GS = 3.5 V
8
6
4
V GS = 3.5 V
DUTY CYCLE = 0.5% MAX
V GS = 10 V
V GS = 4.5 V
V GS = 4 V
V GS = 3 V
2
0
0.0
0.5 1.0 1.5
2.0
0
0
30
60
90
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
1.5
I D , DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
12
1.4
1.3
I D = 18 A
V GS = 10 V
10
I D = 18 A
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
1.2
8
1.1
1.0
6
T J = 125 o C
0.9
4
0.8
T J = 25 o C
0.7
-75
-50
-25
0
25
50
75
100 125 150
2
2
4
6
8
10
T J , JUNCTION TEMPERATURE ( o C )
Figure 3. Normalized On- Resistance
vs Junction Temperature
90
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
100
V GS = 0 V
10
60
30
V DS = 5 V
T J = 125 o C
1
0.1
T J = 125 o C
T J = 25 o C
0
T J = 25 o C
T J = -55 o C
0.01
0.001
T J = -55 o C
1
2
3
4
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
FDMS031 2 S Rev. D
3
www.fairchildsemi.com
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